Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 9273-9277
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The optical absorption of heteroepitaxial InP and GaAs layers grown on exactly [001]-oriented Si substrates was investigated by spectroscopic ellipsometry combined with anodic stripping. In the wavelength range above the band-gap-equivalent wavelength considerable absorption was found which depends on the dislocation density in the layer. A theoretical model based on the electric microfield of charged dislocations was developed which agrees closely with the experimental results. After calibration differential spectroscopic ellipsometry was used to determine the dislocation-density profile in the InP and GaAs layers. Thus, the dislocation density could be determined in the region of a few tens of nm to the heterointerface of InP on Si where the identification and counting of dislocations is impossible by other methods. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362577
Permalink
|
Location |
Call Number |
Expected |
Availability |