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  • 1
    Publication Date: 2019-07-17
    Description: This paper presents extensive {bias determination} analyses of ozone observations from the Atmospheric Chemistry Experiment (ACE) satellite instruments: the ACE Fourier Transform Spectrometer (ACE-FTS) and the Measurement of Aerosol Extinction in the Stratosphere and Troposphere Retrieved by Occultation (ACE-MAESTRO) instrument. Here we compare the latest ozone data products from ACE-FTS and ACE-MAESTRO with coincident observations from nearly 20 satellite-borne, airborne, balloon-borne and ground-based instruments, by analysing volume mixing ratio profiles and partial column densities. The ACE-FTS version 2.2 Ozone Update product reports more ozone than most correlative measurements from the upper troposphere to the lower mesosphere. At altitude levels from 16 to 44 km, the average values of the mean relative differences are nearly all within +1 to +8%. At higher altitudes (4560 km), the ACE-FTS ozone amounts are significantly larger than those of the comparison instruments, with mean relative differences of up to +40% (about +20% on average). For the ACE-MAESTRO version 1.2 ozone data product, mean relative differences are within ±10% (average values within ±6%) between 18 and 40 km for both the sunrise and sunset measurements. At higher altitudes (~3555 km), systematic biases of opposite sign are found between the ACE-MAESTRO sunrise and sunset observations. While ozone amounts derived from the ACE-MAESTRO sunrise occultation data are often smaller than the coincident observations (with mean relative differences down to −10%), the sunset occultation profiles for ACE-MAESTRO show results that are qualitatively similar to ACE-FTS, indicating a large positive bias (mean relative differences within +10 to +30%) in the 4555 km altitude range. In contrast, there is no significant systematic difference in bias found for the ACE-FTS sunrise and sunset measurements.
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
    Format: application/pdf
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 24 (1952), S. 1406-1409 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 542-544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin alloy films of Pd and Ni (8%〈Ni〈20% in at. %) formed by dual-electron-beam evaporation techniques have been found to give durable and quickly reversible detectors of high H2 concentrations (pH2 0.1%–100%, 0.7–700 Torr) near 1 atm and 300 K, including accurate determinations of pH2 around the lower explosive limit of 4% in air. The addition of Ni suppresses the α to β phase transition found in pure Pd under these conditions. The measurement of resistivity changes in the thin films along with flatband shifts of metal-oxide-semiconductor capacitors on the same Si wafer gives accurate values of pH2 over more than six decades.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6500-6505 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio-luminescent sources, and low noise blue-green photodiodes. We report the properties of two types of GaP junctions; a Schottky barrier of Pd on liquid phase epitaxy grown n-type GaP and a p+ over n junction grown by metal-organic chemical vapor deposition. Both types of junctions show very low leakage currents and good efficiency for power conversion from low level beta particles, x rays, and blue-green light.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 24 (1952), S. 768-768 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6839-6844 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been discovered that palladium-gated metal-insulator-silicon Schottky barrier diodes are very sensitive to fluxes of energetic protons in high vacuum. Data on the dosimetric response of the diodes to energetic protons are presented, along with data on the subsequent decay in the induced signal. A model for the response is developed, based on the response of similar structures to partial pressures of molecular hydrogen. The model involves adsorption sites at both the external Pd surface and the interface between Pd and SiO2, as well as known H absorption properties of bulk Pd. The sensitivity at 300 K of our diodes is about 109 protons (1011 cm−2). The inventory of protons stored in the bulk Pd, the surface, and at the interface indicates that the areal site density for the surface and interface is about 1015 cm−2.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4308-4310 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-of-flight photoconductivity measurements were performed on HgI2 using a penetrating, pulsed x-ray source, simulating the operation of photoconductive x-ray detectors. By examining a variety of HgI2 samples, a wide range of electron and hole mobilities were observed, but in all cases hole transport was highly localized, limiting the collection of the photocarriers in HgI2 detectors. The intrinsic photocarrier generation and recombination processes differed from classical Onsager and Langevin mechanisms observed in low-mobility photoconductors.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1216-1217 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation sensing field-effect transistors operated at zero bias show a low-dose response that is roughly linear in the thickness of the gate oxide. The same devices show a thickness squared dependence if a bias is applied during the irradiation. This effect can be explained by examining the effect of diffusion and electron trapping on the buildup of net positive charge in the gate oxide.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1972-1976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new design for radiation-sensing field-effect transistors (RADFETs) is presented, involving the use of very thick silicon nitride layers deposited on top of a high-quality thermal silicon dioxide. In contrast to previous RADFET fabrication procedures, no attempt was made to introduce hole traps into the thermal oxide. Instead the trapping layer at the nitride oxide interface was used to store the positive charge which forms the basis for operation of the RADFET. Data is presented which shows hole transport in the thermal oxide. Models explaining the field dependence of the response and the saturation behavior of the dual dielectric device are given. These RADFETs are more stable than any previously described in the literature and have a sensitivity of 86 μV/rad dose at room temperature.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1074-1083 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of Ag to Pd in the gate metal of a metal-insulator-semiconductor gas sensing diode can improve the performance and change the selectivity of the sensors for a variety of reactions. Data on the response of diodes with 12 different ratios of Ag to Pd in alloys and layers of Pd and Ag to hydrogen and other gases are reported. Diodes with as much as 32% Ag respond very well to H2 gas and the films are much more durable to high hydrogen exposure than pure Pd films. Improvements in the rate of response and aging behavior are found for certain Ag combinations; others give poorer performance. The presence of Ag on the surface changes the catalytic activity in some cases and examples of H2 mixed with O2 and/or NO2, propylene oxide, ethylene, and formic acid are given. Such selectivity forms the basis for miniature chemical sensor arrays which could analyze complex gas mixtures.
    Type of Medium: Electronic Resource
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