Publication Date:
2018-07-27
Description:
Author(s): M. Usman, H. Huebl, A. R. Stegner, C. D. Hill, M. S. Brandt, and L. C. L. Hollenberg This work reports the measurement of electron g -factor anisotropy ( | Δ g | = | g 001 − g 1 1 ¯ 0 | ) for phosphorous donor qubits in strained silicon (sSi = Si/ Si 1 − x Ge x ) environments. Multimillion-atom tight-binding simulations are performed to understand the measured decrease in | Δ g | as a function of x , which is ... [Phys. Rev. B 98, 035432] Published Thu Jul 26, 2018
Keywords:
Surface physics, nanoscale physics, low-dimensional systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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