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  • 1
    Electronic Resource
    Electronic Resource
    Field effect on the gain coefficient in a GaAs-AlGaAs single-quantum-well laser (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4380-4382 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gain coefficient of a GaAs-AlGaAs single-quantum-well laser in an applied static electric field is calculated. The quasi-bound-state energy and the lifetime are obtained by using the tunneling resonance technique. The principal field effects on the laser emission are (i) shift of the laser wavelength, (ii) reduction and broadening of the gain spectrum, and (iii) increase of the threshold current. Based on the field-dependent shift of the peak gain position, a possible wavelength tuning mechanism for the quantum-well laser is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344909
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic surface state (Tamm state) under electric field in semiconductor superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 524-526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling resonance technique is used to study the electronic surface state (Tamm state) [Phys. Rev. Lett. 64, 2555 (1990)] under external electric field in semiconductor superlattices. The localization characteristics of the confined surface states depend on the direction and strength of the applied electric field. In the weak-field regime the surface states behave delocalized due to the distortion of the periodic medium by the applied field. The calculations presented can provide eigenenergy, wave function, and lifetime for the quasibound surface states, which are related directly to the optical properties of surface states under an electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350692
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  • 3
    Electronic Resource
    Electronic Resource
    Quantum-confined field-effect wavelength tuning in a three-terminal double quantum well laser (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2282-2284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A three-terminal quantum-confined field-effect double quantum well laser device is proposed. The wavelength shift scheme caused by the field-induced change in the energy levels is demonstrated. With the current injected and the electric field applied to different wells, wide range wavelength shift can be achieved by changing the applied field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102940
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  • 4
    Electronic Resource
    Electronic Resource
    Electronic surface states confined to the boundary of periodic multiple quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1669-1671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A semi-infinite stratified multiquantum well structure with the boundary connected to a homogeneous medium is suggested. Electronic surface states are found to exist under certain conditions. These surface states have an interesting feature that the eigenenergy may even exceed the confinement potential of the periodic substrate. Possible application of this structure in optoelectronic devices is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104081
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  • 5
    Electronic Resource
    Electronic Resource
    Resonant-cavity GaAs/InGaAs/AlAs photodiodes with a periodic absorber structure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 141-143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant-cavity photodiodes with a periodic absorber structure are demonstrated. The photodiode consists of three thin InGaAs absorbing layers located at the antinodes of standing wave optical field in a resonant cavity. The bottom mirror of the resonant cavity is formed by a GaAs/AlAs quarter-wave stack, while the top mirror is formed by the GaAs/air interface. Theoretical estimation based on the standing wave effect gives 70% peak quantum efficiency at the resonant wavelength. The peak quantum efficiency of this photodiode, as measured by a calibrated Si photodetector, enhanced by 30% as compared to a conventional resonant-cavity photodiode with a single absorbing layer of the same overall thickness. The observed enhancement in quantum efficiency is consistent with theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110379
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  • 6
    Electronic Resource
    Electronic Resource
    Electric-field effect on the minigap state in semiconductor superlattices (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 710-712 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric-field effect on the confined minigap states in coupled semiconductor superlattices is studied theoretically. Due to the perturbation of periodicity in the superlattice by an applied field, delocalization of the confined states is observed. In the weak field regime, delocalization of the minigap states is similar to the quantum confined Stark effect in single quantum wells. In the strong field regime, confined states disappear, and additional states from the original superlattice miniband are introduced to form semibound states due to the mixing of localized Stark ladders with the gap mode. Our numerical simulation will have an impact on confirmation of the proposed confined states in experimental observations. Possible device applications are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106545
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  • 7
    Electronic Resource
    Electronic Resource
    Low resistance ohmic contacts on wide band-gap GaN (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1003-1005 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n-GaN (∼1017 cm−3) using an Al/Ti bilayer metallization scheme. Four different thin-film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron-beam evaporation onto the GaN substrate, and then thermally annealed in a temperature range from 500 to 900 °C in a N2 ambient using rapid thermal annealing techniques. The lowest value for the specific contact resistivity of 8×10−6 Ω cm2, was obtained using Ti/Al metallization with anneals of 900 °C for 30 s. X-ray diffraction and Auger electron spectroscopy depth profile were employed to investigate the metallurgy of contact formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111961
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: Electronic surface states confined to the boundary of periodic multiple quantum wells [Appl. Phys. Lett. 57, 1669 (1990)] and Tunneling resonance studies of electronic ministop gap mode in coupled semi-infinity semiconductor superlattices [Appl. Phys. Lett. 57, 2199 (1990)] (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3191-3191 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106425
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  • 9
    Electronic Resource
    Electronic Resource
    GaAs/InGaAs/AlGaAs optoelectronic switch in avalanche heterojunction phototransistor vertically integrated with a resonant cavity (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 405-407 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An optoelectronic switch with high sensitivity based on avalanche multiplication is demonstrated in a GaAs/InGaAs/AlGaAs heterojunction bipolar phototransistor (HPT) with an integrated resonant cavity. The device, similar to a resonant-cavity enhanced HPT, consists of a four layer n+-p+-i-n structure. Excellent electrical switching characteristics with a high control voltage efficiency (Vs/Vh) of 1.8 have been obtained when the device is operated in the dark. The device can be switched optically at a selected wavelength owing to the integrated resonant cavity. By exploiting the inherent high optical gain, an extremely high optical control sensitivity (∂Vs/∂P0), exceeding 6 V/μW, has been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111162
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  • 10
    Electronic Resource
    Electronic Resource
    Nonalloyed ohmic contacts on GaN using InN/GaN short-period superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2557-2559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is well known that ohmic contacts on GaN, a highly promising material for electronic and optoelectronic devices with a wide band gap of about 3.4 eV, constitute a major obstacle to further development of devices based on this material. We demonstrated a novel scheme of nonalloyed ohmic contacts on GaN using a short-period superlattice (SPS), composed of GaN and narrow band-gap InN, sandwiched between the GaN channel and an InN cap layer. Comparison with a similar layer without the SPS structure indicates that quantum tunneling through the SPS conduction band effectively reduces the potential barrier formed by the InN/GaN heterostructure leading to low contact resistivities. From the transmission-line-method measurements, specific contact resistances as low as 6×10−5 Ω cm2 with GaN doped at about 5×1018 cm−3 have been obtained without any post-annealing. Theoretical estimation based on the SPS tunneling model is consistent with the experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111573
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