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  • 1
    Electronic Resource
    Electronic Resource
    Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio frequency magnetron sputtering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5928-5934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric SrBi2Ta2O9 (SBT) thin films were deposited on Pt/TiOx/SiO2/Si substrates using the off-axis radio frequency magnetron sputtering technique. X-ray diffraction and atomic force microscopy experiments showed that the crystallization of SBT thin films at 〉700 °C correlated with the formation of rod-like grains. Cross-sectional field emission scanning electron microscopy images revealed that the apparent thickness of SBT decreased while the thickness of Pt increased as the annealing temperature was increased. The apparent decrease in the thickness of SBT was attributed to crystallization and densification in the film whereas the apparent increase in Pt thickness was due to diffusion of Ti and Bi into the Pt layer. This diffusion at high annealing temperatures (800 °C and above) alters the Pt purity and degrades the Pt as the bottom electrode for the ferroelectric capacitor. Good insulating properties were obtained when the SBT film was annealed at 700 and 750 °C whereas higher leakage currents were observed at annealing temperatures 〉800 °C. A remnant polarization (Pr) of 4.35 μC/cm2 and coercive field (Ec) of 31.5 kV/cm were obtained for the SBT thin film annealed at 750 °C with a leakage current density of 〈10−7 A/cm2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317240
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  • 2
    Electronic Resource
    Electronic Resource
    Argon incorporation and surface compositional changes in InP(100) due to low-energy Ar+ ion bombardment (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6655-6660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Angle-resolved x-ray photoelectron spectroscopy (ARXPS) has been used to study the Ar incorporation and surface compositional changes in InP(100) after 1–5 keV Ar+ bombardment at various ion fluences. The ARXPS measurements showed that the incorporated Ar concentration achieved saturation at ion bombardment fluences of 〉1016 cm−2. The surface Ar concentration decreased with increasing bombardment energy. No Ar bubbles were observed by atomic force microscopy, suggesting that Ar bubble formation was not the main Ar trapping mechanism. The altered layers were, on average, In rich up to the sampling depth of the ARXPS technique. However, the altered layers were inhomogeneous as a function of depth and appeared more In rich at the surface than in the subsurface region. The results are compared with those obtained by other authors and discussed in the context of preferential sputtering, radiation-enhanced diffusion and segregation, and Ar incorporation. Although the altered layers were In rich, a P-rich phase induced by Ar+ bombardment was identified in the altered layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363789
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  • 3
    Electronic Resource
    Electronic Resource
    Argon incorporation and silicon carbide formation during low energy argon-ion bombardment of Si(100) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2934-2941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Argon incorporation and the formation of silicon carbide in Si(100) by low energy Ar+ ion bombardment have been studied by angle-resolved x-ray photoelectron spectroscopy (XPS). The bombardment was performed at ion energies of 1, 1.5, and 2 keV and various ion fluences in an ultrahigh vacuum chamber equipped with XPS. The XPS measurements showed that the incorporated Ar concentrations achieved saturation in the near-surface region at ion bombardment fluences (approximately-greater-than)1016 cm−2. The surface Ar concentrations decreased with increasing bombardment energy. No Ar bubbles on the surface of Ar+-bombarded samples were observed by atomic force microscopy under these experimental conditions suggesting that Ar bubble formation was not the main Ar trapping mechanism in our study. The SiC formation was confirmed by characteristic XPS peaks of Si 2p and C 1s for SiC. The carbide formed at lower ion fluence was of a metastable structure as inferred by XPS. Bombardment at higher ion fluence yielded a stable carbide phase through continuous ion beam mixing. No strong dependence of carbide depth distribution on bombardment energy was observed suggesting that the carbide phase is probably dispersed inside the bombarded layer and that carbon is bonded to silicon at localized defect sites. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361289
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  • 4
    Electronic Resource
    Electronic Resource
    High-sensitivity ultrasonic interferometer for the detection of magnetic phase transitions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3193-3195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improved technique is described for the detection of magnetic phase transitions using acoustic waves with electrical interferometry. The method employs zinc oxide transducers sputtered directly onto the sample. These transducers operate efficiently at frequencies up to 3 GHz, corresponding to acoustic wavelengths of the order of 2 μm. By measuring the phase of high-order multiple echoes, changes in sample thickness and/or velocity of parts in 109 can be detected. The method has been used to determine the phase diagram of the metamagnet dysprosium aluminum garnet for magnetic fields parallel to [001]. General agreement with earlier determinations based on thermodynamic measurements is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338924
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetoelastic effects on antiferromagnetic phase transitions (invited) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3904-3909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of elastic strains on antiferromagnetic phase transitions is considered. For cases in which the magnetic and chemical unit cells coincide, the combination of a strain and an applied field is found to lead to the possibility of a linear magnetoelastic (LME) coupling which may induce antiferromagnetic order, even in the normally paramagnetic phase. Such an effect can, in principle, destroy any second-order phase transition. An order of magnitude estimate shows that the effect is small but not negligible, and that it may explain a number of unusual effects observed in dysprosium aluminum garnet, including anomalous neutron scattering, magnetic hysteresis and magnetostriction. Similar strain-induced effects may be important in many other antiferromagnets, including CoF2, FeF2, MnF2, and αFe2O3, as well as in mixed crystals with the same structures. Strain gradients may produce similar effects in other antiferromagnets which are magnetoelectric, including DyPO4, DyAlO3, and Cr2O3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340601
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  • 6
    Electronic Resource
    Electronic Resource
    Trends in bonding configuration at SiC/III–V semiconductor interfaces (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1643-1645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electronic properties of interfaces between β-SiC and III–V semiconductors are studied by first-principles calculations. Favorable bonding configurations are found to form between Si–V and C–III (model A) for BN, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs, and InSb, and Si–III and C–V (model B) for BP, BAs, BSb, AlSb, and GaSb. The relationship between the formation energy difference and lattice constant difference, as well as the charge distribution, for these two models is found. The origin of bonding configurations can be explained in terms of the ionicity of III–V semiconductors, electrostatic effect, charge distribution, and band-structure component. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402162
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  • 7
    Electronic Resource
    Electronic Resource
    Synthesis of large area aligned carbon nanotube arrays from C2H2–H2 mixture by rf plasma-enhanced chemical vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 680-682 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large area aligned carbon nanotube (CNT) arrays have been successfully synthesized from C2H2 and H2 mixture by rf plasma-enhanced chemical vapor deposition (without hot filament) on iron-coated silicon substrates. H2 plasma (not H2 gas) was confirmed to play the role of reducing iron oxide to metallic iron and promoting the formation of evenly separated particles, as well as being the primary factor in synthesizing aligned CNTs. The addition of H2 gas with no plasma during the growth resulted in randomly oriented CNTs. Meanwhile, without the addition of H2, the C2H2 plasma resulted in the growth of very fine worm-like carbon fibers. Using substrates with a thicker catalyst layer (〉90 nm) reduced the CNT density significantly. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390314
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  • 8
    Electronic Resource
    Electronic Resource
    Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3926-3928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical nonlinearity and excited carrier lifetime in Ge nanocrystals (nc-Ge) embedded in a silica matrix have been investigated by means of single beam z scan and pump-probe techniques with laser pulse duration of 35 ps and 532 nm wavelength. The nc-Ge samples were prepared using magnetron cosputtering and postgrowth annealing at 800 °C. The nonlinear absorption coefficient α2 and refractive index n2 were found to range between 190 and 760 cm/GW, and 0.0026 and 0.0082 cm2/GW, respectively, and be proportional to the Ge concentration in the film. The confined excited carriers were found to depopulate with a lifetime of ∼70 ps. The nonlinearity in Ge nanocrystals is deduced to originate mainly from excited carrier absorption, with two-photon absorption providing a small contribution. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330569
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  • 9
    Electronic Resource
    Electronic Resource
    An investigation of the Ar+ ion-enhanced reaction of CCl4 on Si(100) by secondary ion mass spectrometry (1994)
    Springer
    Journal of materials science 29 (1994), S. 4037-4042 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The Ar+ ion-enhanced reaction of carbon tetrachloride (CCl4) on Si(100) at room temperature is investigated at primary ion energies of 2 and 9 keV using the secondary ion mass spectrometry (SIMS) technique. Static SIMS shows that CCl4 reacts with Si at room temperature. This surface reaction is enhanced by simultaneous sputtering with an Ar+ ion beam, the reaction rate being higher at 9 keV than at 2 keV. Possible products of surface reaction are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00355966
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  • 10
    Electronic Resource
    Electronic Resource
    Atomic force microscopy investigation of the O2+-induced surface topography of InP (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 930-938 
    Details
    ISSN: 0142-2421
    Keywords: AFM ; XPS ; surface topography ; InP ; ion bombardment ; x-ray photoelectron spectroscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The surface topography development of InP as a function of O2+ ion energy and incident angle was investigated using atomic force microscopy (AFM). Cone formation was found to be the dominant surface feature under various O2+ ion bombarding conditions. However, variations in the density and size of the cones at different O2+ ion bombardment conditions were observed. The variation of surface topography with O2+ ion bombardment conditions is correlated with changes in InP surface composition. The results support an intrinsic model of cone formation, which postulates that the sputtering of InP causes In enrichment at the surface due to the preferential sputtering of phosphorus from InP. Furthermore, radiation-enhanced surface diffusion results in agglomeration of indium atoms into indium clusters. These indium clusters seed the development of sputter cones due to the difference in sputter rates of InP and indium. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 7 Ill.
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