ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
To use SiC substrate as a semiconductor device and epitaxial growth, the surface of SiCsubstrate should be made smooth at an atomic level in the state of monocrystalline. But, the pastslurry caused defects such as the pit and the scratch on the surface. This tendency was very strong in(000-1) C-face. We achieved ideal surface for SiC devices using newly developed slurry. In thissurface, the roughness (Ra) of (0001) Si face and (000-1) C face evaluated by the AFM were 0.1nmor less, and confirmed that the surface were monocrystalline by CAICISS measurement. From theseresults, it is thought that the crystal face obtained by the slurry newly developed. In addition, theSchottky barrier diode was formed directly on the polished surface, that was obtained the breakdownvoltage of 1.2kV or more. We thought that this results is possible to make the Schottky barrier diodewithout epitaxial growth
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.823.pdf
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