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  • 1
    Electronic Resource
    Electronic Resource
    Disorder/order/disorder Ga0.5In0.5P visible light-emitting diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5420-5422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new Ga0.5In0.5P light-emitting diode (LED) with order/disorder/order (DOD) structure has been fabricated by metalorganic chemical vapor deposition. Growth temperature and dopant concentration were successfully used as growth parameters to obtain a heterojunction-equivalent structure. From the 77 K photoluminescence measurement, three peak energies of the DOD structure can be resolved clearly. It is shown that the DOD structure is equivalent to the double-heterojunction structure. The wavelength of the LED occurring at 667 nm coincides with the ordered active layer emission. The light intensity of the DOD LED is seven times stronger as compared with that of the homojunction disordering LED at the injection current of 10 mA. These results demonstrate that the DOD structure can provide good electrical and optical confinements and can be served as heterojunction-equivalent applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351982
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  • 2
    Electronic Resource
    Electronic Resource
    Ordering effect on the performance of Ga0.5In0.5P visible light-emitting diodes grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1513-1516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering effect on the performance of Ga0.5In0.5P visible light-emitting diodes (LEDs) has been reported. The GaInP LEDs were fabricated on GaAs substrates at 675 and 730 °C by metalorganic chemical vapor deposition, with ordered and disordered structures. A sample with an ordered structure shows anomalous device performance, where emitting wavelength change, low light intensity, and early saturation were observed from the current-light intensity relationship. From the current-voltage measurement, it was found that the sample with ordered structure also yields an inferior diode performance. These phenomena could be due to the existence of antiphase boundaries in the ordered structures. The antiphase boundaries can act as generation-recombination centers and result in the anomalous behavior of the ordered GaInP LED.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351220
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  • 3
    Electronic Resource
    Electronic Resource
    Indium phosphide on silicon heteroepitaxy: Lattice deformation and strain relaxation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3338-3342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice deformation and strain relaxation in epitaxial InP directly on (001) Si are studied as a function of layer thickness using x-ray diffraction and photoluminescence (PL) techniques. The heteroepilayers were grown by low-pressure organometallic vapor-phase epitaxy and showed good quality. We find that mismatch-induced compressive strains are still present in InP layers with a thickness less than 1 μm. The rate of strain release is much lower than the prediction based on the equilibrium theory. With increasing thickness above 1.1 μm, the InP/Si layers suffer in-plane tensile strains as a result of differential thermal contraction during the cooling process after growth. Fairly good agreement is found between the PL and x-ray data for the strain variations in the InP/Si heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346386
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  • 4
    Electronic Resource
    Electronic Resource
    Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 236-238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specular single-crystal InP epilayers have been grown directly on Si(100) substrates by low-pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post-growth thermal annealing at 780 °C was also confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101017
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  • 5
    Electronic Resource
    Electronic Resource
    Strain variations in heteroepitaxial InP-on-Si grown by low-pressure metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations in the magnitude and sign of the strain in epitaxial InP directly on (001) Si are studied as a function of layer thickness using photoluminescence and x-ray diffraction techniques. The heteroepilayers were grown by low-pressure metalorganic chemical vapor deposition and showed good quality. We find that biaxial compressive strains are still present in InP layers with thickness up to 0.8 μm. The magnitudes of compressive strains are much larger than those expected from the equilibrium theory. With increasing thickness above 1 μm, the InP/Si layers suffer biaxial tensile strains as a result of differential thermal contraction during the cooling process after growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101137
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  • 6
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of Ga0.51In0.49P/GaAs on Si by low-pressure organometallic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2614-2616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on preliminary results of heteroepitaxial growth of Ga0.51In0.49P on Si with a GaAs interlayer by low-pressure organometallic chemical vapor deposition (OMCVD). The surface morphologies and crystalline quality of the films were found to be critically dependent on the growth parameters of the initial GaAs buffer layer. Under optimum conditions, specular single-crystal Ga0.51In0.49P epilayers can be reproducibly obtained. Capacitance-voltage measurements show that the carrier distribution in the grown layer is very uniform. The 77 K photoluminescence spectrum exhibits a strong near-band-edge emission with a half-width of 22 meV. These results can compete with those reported previously for the OMCVD-grown GaxIn1−xP on GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100175
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  • 7
    Electronic Resource
    Electronic Resource
    The effects of rapid thermal process on the properties of sputtered SrS:CeF3 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1363-1366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Y2O3/SrS:Ce/BaTiO3 electroluminescent (EL) structure has been deposited by rf-magnetron reactive sputtering and, subsequently, submitted to various thermal treatments. The effects of the rapid thermal process (RTP) on the properties of SrS:Ce thin films have been investigated, and compared with the results obtained by the conventional furnace. After postdeposition annealing, the SrS film has the tendency to recrystallize preferentially in the (200) plane. The higher RTP temperature also results in the larger grain size of SrS. Auger measurements show that the RTP method can overcome the nonstoichiometry and interdiffusion problems encountered in the furnace-treated sample. It was found that the EL peaks gradually recovered to the band transitions of Ce3+ ions (475 and 530 nm) in the SrS crystal field as the RTP temperature increased from 650 to 850 °C. The threshold voltage can be further reduced to 150 V, and the brightness increases to eight times, as compared with that of the optimum furnace-treated device. The improvements in EL performance are owing to the facts that the RTP can enhance the crystallinity of SrS, alleviate oxygen-induced defect centers from interdiffusion, activate Ce3+ ions in phosphor, and yield a blueshift in emission colors. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365912
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  • 8
    Electronic Resource
    Electronic Resource
    Material properties of InP-on-Si grown by low-pressure organometallic vapor-phase epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1213-1216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped InP epilayers have been grown directly on (100) Si substrates by low-pressure organometallic vapor-phase epitaxy. The surface morphology, x-ray diffraction peak width, and ion backscattering yield each improve substantially with InP thickness (0.1–3 μm). X-ray and photoluminescence (PL) measurements demonstrate that the InP heteroepilayers are under biaxial tensile strain in the surface parallel direction. The carrier concentration profile shows that the carrier distribution in the InP layer is very uniform, while an apparent reduction in concentration occurs at the InP/n-type Si interface. The 77-K PL spectrum reveals a strong near-band-edge emission with a full width at half maximum of 14 meV. Post-growth thermal annealing at 780 °C was confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343011
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  • 9
    Electronic Resource
    Electronic Resource
    Ordering effects on the electrical characteristics of Ga0.5In0.5P grown by metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3261-3263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between electrical characteristics and structural ordering in undoped and Zn-doped Ga0.5In0.5P films grown by metalorganic chemical vapor deposition is investigated. The Schottky diode was used to examine the electrical properties of the undoped samples with ordered and disordered structures. With the same carrier concentration (∼1.5×1016 cm−3), the diode fabricated on the ordered film shows a degraded current-voltage characteristic. As the carrier concentration of Zn-doped Ga0.5In0.5P increases above 1.5×1018 cm−3, the energy gap of the ordered structure is larger than that of the disordered structure. It was found that the hole mobility of the ordered film is lower than that of the disordered film with the similar doping level. The behavior could be attributed to the existence of antiphase boundaries within the ordered structure. The antiphase boundaries can act as recombination centers and/or scattering centers and result in the extraordinary electrical properties of the ordered samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105751
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  • 10
    Electronic Resource
    Electronic Resource
    Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 207-209 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxy of GaAs on Si with a ZnSe interlayer by low-pressure metalorganic chemical vapor deposition is reported. The structural and electrical properties of the GaAs epilayers grown on ZnSe/Si substrates were found to be superior to those of the GaAs directly on Si. The surface dislocation density of the GaAs/ZnSe/Si film can be reduced to 2×105 cm−2, which is one order of magnitude lower than that of GaAs/Si. The planar Schottky diode fabricated on the GaAs/ZnSe/Si sample shows a reverse breakdown voltage as high as 30 V, whereas the diode on GaAs/Si has a breakdown voltage of about 12 V. In addition, the residual stress in the GaAs heteroepilayers calculated from photoluminescence peak shifts was 8.2×108 dyn/cm2 for the GaAs/ZnSe/Si structure, as compared to 2.7×109 dyn/cm2 for the GaAs directly on Si. This indicates that the ZnSe intermediate layer is also effective in reducing the residual stress in the GaAs film grown on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105967
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