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  • 1
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    Springer Nature | Palgrave Macmillan
    Publication Date: 2022-02-15
    Description: This open access book examines why Japan discontinued its quarter-century history of troop contribution to UN Peacekeeping Operations (1992–2017). Japan had deployed its troops as UN peacekeepers since 1992, albeit under a constitutional limit on weapons use. Japan’s peacekeepers began to focus on engineering work as its strength, while also trying to relax the constraints on weapons use, although to a minimal extent. In 2017, however, Japan suddenly withdrew its engineering corps from South Sudan, and has contributed no troops since then. Why? The book argues that Japan could not match the increasing “robustness” of recent peacekeeping operations and has begun to seek a new direction, such as capacity-building support.
    Keywords: Open Access ; Japanese studies ; peacekeeping ; peacebuilding ; security policy ; United Nations ; Japanese foreign policy ; SDG 16 ; sustainable development goals ; peace operations ; Japan’s contribution to global peace ; bic Book Industry Communication::J Society & social sciences::JP Politics & government::JPS International relations ; bic Book Industry Communication::J Society & social sciences::JP Politics & government ; bic Book Industry Communication::H Humanities::HB History::HBJ Regional & national history::HBJF Asian history
    Language: English
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  • 2
    Publication Date: 2019
    Description: A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al2O3 gate dielectric film on a free-standing GaN substrate fabricated by triple ion implantation is presented. The DMOSFET was formed with Si ion implanted source regions in a Mg ion implanted p-type base with N ion implanted termination regions. A maximum drain current of 115 mA/mm, maximum transconductance of 19 mS/mm at a drain voltage of 15 V, and a threshold voltage of 3.6 V were obtained for the fabricated DMOSFET with a gate length of 0.4 μm with an estimated p-type base Mg surface concentration of 5 × 1018 cm−3. The difference between calculated and measured Vths could be due to the activation ratio of ion-implanted Mg as well as Fermi level pinning and the interface state density. On-resistance of 9.3 mΩ·cm2 estimated from the linear region was also attained. Blocking voltage at off-state was 213 V. The fully ion implanted GaN DMOSFET is a promising candidate for future high-voltage and high-power applications.
    Electronic ISSN: 1996-1944
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by MDPI
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