Electronic Resource
Son, N. T.
;
Chen, W. M.
;
Kordina, O.
;
[et al.]
Konstantinov, A. O.
;
Monemar, B.
;
Janzén, E.
;
Hofman, D. M.
;
Volm, D.
;
Drechsler, M.
;
Meyer, B. K.
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 1074-1076
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Results from optically detected cyclotron resonance (ODCR) studies of electron effective masses in 4H SiC are reported. ODCR measurements were performed on high-purity n-type 4H SiC epitaxial layers grown by chemical vapor deposition at both X band (9.23 GHz) and Q band (35.05 GHz) microwave frequencies. Electron effective masses in 4H SiC were directly determined as m⊥*=0.42m0 and m(parallel)*=0.29m0. A scattering time in the basal plane τ⊥≈4.3×10−11 s, and hence, the corresponding electron mobility μ⊥≈1.8×105 cm2/V s, was obtained from a fit of the ODCR line shape. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113576
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