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  • 1
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    InGaAs PV Device Development for TPV Power Systems (1994)
    In:  CASI
    Details
    Publication Date: 2004-12-03
    Description: lndium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2% (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8% efficiency under a 1500 K blackbody with a projected efficiency of 29.3%. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8% and 6% respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.
    Keywords: Energy Production and Conversion
    Type: Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13); 341-351; NASA-CP-3278
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  • 2
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    InGaAs PV device development for TPV power systems (1994)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 on Indium phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high rack currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.
    Keywords: SOLID-STATE PHYSICS
    Type: Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13); p 341-351
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  • 3
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    InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications (2004)
    In:  CASI
    Details
    Publication Date: 2018-06-06
    Description: There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.
    Keywords: Solid-State Physics
    Type: Proceedings of the 15th Space Photovoltaic Research and Technology Conference; 131-138; NASA/CP-2004-212735
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  • 4
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    High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine (1994)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-106598 , E-8872 , NAS 1.15:106598
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  • 5
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    Electrical and Optical Performance Characteristics of p/n InGaAs Monolithic Interconnected Modules (1997)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: There has been a traditional trade-off in ThermoPhotoVoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A Monolithic Interconnected Module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual Indium Gallium Arsenide (InGaAs) devices series-connected on a single semi-insulating Indium Phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An InfraRed (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74eV InGaAs, have demonstrated V(sub infinity) = 3.2 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. IR reflectance measurements (greater than 2 microns) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.
    Keywords: Energy Production and Conversion
    Type: NASA-TM-113110 , NAS 1.15:113110 , IECEC-97528 , E-10866 , Intersociety Energy Conversion Engineering Conference; Jul 27, 1997 - Aug 01, 1997; Honolulu, HI; United States
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  • 6
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    High Beginning-of-Life Efficiency p/n InP Solar Cells (2004)
    In:  CASI
    Details
    Publication Date: 2019-07-10
    Description: We have achieved a new record efficiency of 17.6%, (AM0) for a p/n InP homo-epitaxy solar cell. In addition, we have eliminated a previously observed photo-degradation of cell performance, which was due to losses in J(sub sc). Cells soaked in AM0 spectrum at one-sun intensity for an hour showed no significant change in cell performance. We have discovered carrier passivation effects when using Zn as the p-type dopant in the OMVPE growth of InP and have found a method to avoid the unexpected effects which result from typical operation of OMVPE cell growth.
    Keywords: Energy Production and Conversion
    Type: Proceedings of the 15th Space Photovoltaic Research and Technology Conference; 85-92; NASA/CP-2004-212735
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  • 7
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    Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules (1997)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.
    Keywords: Composite Materials
    Type: NASA-TM-113122 , NAS 1.15:113122 , E-10881 , ThermoPhotovoltaic Energy Conversion; May 18, 1997 - May 20, 1997; Colorado Springs, CO; United States
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  • 8
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    Laser induced OMCVD growth of AlGaAs on GaAs (1987)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: A major factor limiting the efficiency of the GaAs-GaAlAs solar cell is the rate of recombination at the GaAs-AlGaAs interface. Evidence has been previously reported which indicates that recombination at this interface can be greatly reduced if the AlGaAs layer is grown at lower than normal temperatures. The authors examine the epitaxial growth of AlGaAs on GaAs using a horizontal OMCVD reactor and an excimer laser operating in the UV (lambda = 193 nm) region. The growth temperatures were 450 and 500 C. The laser beam was utilized in two orientations: 75 deg angle of incidence and parallel to the substrate. Film composition and structure were determined by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). Auger analysis of epilayers grown at 500 C with the laser impinging show no carbon or oxygen contamination of the epitaxial layers or interfaces. TEM diffraction patterns of these same epilayers exhibit single crystal (100) zone axis patterns.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Photovoltaic Specialists Conference; May 04, 1987 - May 08, 1987; New Orleans, LA; United States
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  • 9
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    InGaAs PV Device Development for TPV Power Systems (1994)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-TM-106718 , E-9084 , NAS 1.15:106718 , Conference on Thermophotovoltaic Generation of Electricity; Jul 24, 1994 - Jul 26, 1994; Copper Mountain, CO; United States
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  • 10
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    High-Efficiency Multi-Junction Space Solar Development Utilizing Lattice Grading (2005)
    In:  CASI
    Details
    Publication Date: 2019-07-11
    Description: Progress towards achieving a high one-sun air mass 0 (AM0) efficiency in a monolithic dual junction solar cell comprised of a 1.62 eV InGaP top cell and a 1.1 eV InGaAs bottom cell grown on buffered GaAs is reported. The performance of stand-alone 1.62 eV InGaP and 1.1 eV InGaAs cells is compared to that of the dual junction cell. Projected AM0 efficiencies of 15.7% and 16.5% are expected for the 1.62 eV InGaP and 1.1 eV InGaAs cells grown on buffered GaAs. The dual junction cell has a projected one-sun AM0 conversion efficiency of 17%. The projected efficiencies are based upon the application of an optimized anti-reflective coating (ARC) to the as-grown cells. Quantum efficiency (QE) data obtained from the dual junction cell indicate that is is bottom cell current limited with the top cell generating 50% more current than the bottom cell. A comparison of the QE data for the stand-alone 1.1 eV InGaAs cell to that of the 1.1 eV InGaAs bottom cell in the tandem configuration indicates a degradation of the bottom cell conversion efficiency in the tandem configuration. The origin of this performance degradation is at present unknown. If the present limitation can be overcome, then a one-sun AM0 efficiency of 26% is achievable with the 1.62 eV/1.1 eV dual junction cell grown lattice-mismatched to GaAs.
    Keywords: Solid-State Physics
    Type: 16th Space Photovoltaic Research and Technology Conference; 122-128; NASA/CP-2001-210747/REV1
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