ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present an analytical modeling of the noise temperature associated with velocity fluctuations obtained in the framework of the linear-response theory around a steady state. The expressions are rigorously related to an eigenvalue expansion of the response matrix and are applicable to ohmic as well as to nonohmic (hot-carrier) conditions. Theory requires as input parameters the reciprocal carrier effective mass, the drift velocity, the carrier energy, the variance of velocity fluctuations, and the covariance of velocity-energy fluctuations as functions of the electric field in stationary and homogeneous conditions. The analytical results obtained for the case of holes in Si and electrons in GaAs at T=300 K are validated by comparison with experiments. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363485
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