Publication Date:
2014-01-11
Description:
Author(s): Hitoshi Sato, Hitoshi Yamaoka, Yuki Utsumi, Heisuke Nagata, Marcos A. Avila, Raquel A. Ribeiro, Kazunori Umeo, Toshiro Takabatake, Yumiko Zekko, Jun'ichiro Mizuki, Jung-Fu Lin, Nozomu Hiraoka, Hirofumi Ishii, Ku-Ding Tsuei, Hirofumi Namatame, and Masaki Taniguchi Pressure dependence of the Yb valence in YbNiGe3 has been investigated up to 15.6 GPa at 300 K and up to 7.7 GPa at 17 K by means of x-ray absorption spectroscopy in Lα1 partial fluorescence yield mode and resonant x-ray emission spectroscopy around the Yb L3 absorption edge. The Yb valence in YbNiG... [Phys. Rev. B 89, 045112] Published Fri Jan 10, 2014
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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