Publication Date:
2017-08-12
Description:
Author(s): Hitoshi Mori, Hidetomo Usui, Masayuki Ochi, and Kazuhiko Kuroki We theoretically investigate how each orbital and valley play a role in high thermoelectric performance of SnSe. In the hole-doped regime, two kinds of valence band valleys contribute to its transport properties: one is the valley near the U-Z line, mainly consisting of the Se- p z orbitals, and the o... [Phys. Rev. B 96, 085113] Published Tue Aug 08, 2017
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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