ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The present paper is based on the contribution by Niihara and his co-workers devoted toindentation testing of ceramic materials, while it provides new observations of peculiarities registeredduring nanoindentation of sapphire, GaAs and InGaNAs deposited by MBE-technique. Exploitingprevious studies of the spherical indentation in sapphire, the present authors recognized differentcauses that result in the apparently similar pop-in phenomenon for sapphire and GaAs-basedsemiconductors. The finite element modeling of the quasi-plastic nanoindentation of the ( 1 1 20)plane of sapphire with the elastically deformable tip confirmed that the deformation of sapphire isgoverned by twinning which causes pop-in phenomenon, as suggested earlier by Niihara et al. Thesingularities registered for GaAs-based crystals are associated with dislocation movement within{111} slip bands, which is in contrast to the case of sapphire
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.317-318.293.pdf
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