ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have studied uniform growth of crystalline Ge films on quartz plate from VHF(60MHz)-ICP of 10% GeH4 diluted with H2 in the temperature range from 150 to 350ºC. Byoptimizing total gas flow rate, gas pressure, VHF power and antenna-substrate distance, the growthrate as high as 7.4nm/s was obtained at 150ºC and increased gradually up to ~7.9nm/s at 350ºC. Thecrystallinity, which was evaluated by Raman scattering measurements as an integrated intensity ratioof TO phonons in crystalline phase to those in disordered phase, reached a value as high as ~93 % at350ºC, but degraded down to 64% at 150ºC as a result of the formation of a 60~70nm-thickamorphous incubation (A. I.) layer on quartz. By applying a two-step deposition method at 150ºC, inwhich the GeH4 concentration was selected to be 0.6% for the crystalline nucleation in the first 10sdeposition, being as thin as 10nm in thickness, and then changed to 10% GeH4 for the high rategrowth, the crystallinity was improved to 78% with keeping an effective growth rate as high as7.5nm/s, because of a significant increase in the growth rate after the crystalline nucleation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.561-565.1209.pdf
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