ISSN:
0142-2421
Schlagwort(e):
Chemistry
;
Polymer and Materials Science
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Physik
Notizen:
We present results on deconvolution of molecular beam epitaxy (MBE)-grown boron profiles in Si and SiGe that are of crucial importance for Si/SiGe heterojunction bipolar transistors (HBTs). They are based on the assumptions of linearity and homogeneity of the measurement. We determine experimentally the physical limits of these assumptions by investigating sequences of boron spikes in Si and SiGe. The deconvolution is performed by Fourier transformation into the k-domain, preceded by a physically motivated least-squares fitting of the measurement data. In this way, the high-frequency noise contributions are eliminated to a great extent without producing a systematic broadening. The numerical evaluation of the SIMS profiles is extremely fast in comparison to forward techniques and the numerical error is shown to be small. We discuss the deconvoluted SIMS profiles of MBE-grown boron spikes in Si and SiGe after annealing. Our method is suited to give information about the dopant outdiffusion from th SiGe layer in the case of HBTs.
Zusätzliches Material:
10 Ill.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1002/sia.740231105
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