ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A 35 cm diam inductively coupled rf ion source and its applications for material processing is described. This is the largest commercial rf ion-beam source presently available for ion-beam etching and deposition. It has been used to generate beams of different ions (Ne+, Ar+, Kr+, Xe+, O2〈sup ARRANGE="STAGGER"〉+, Cl2〈sup ARRANGE="STAGGER"〉+, CH4〈sup ARRANGE="STAGGER"〉+,...) at 50–1000 eV of ion energy and corresponding beam currents of 0.15–1.5 A. A presentation of the ion source operation characteristics, along with performance results for various etching and deposition applications are given. Etch uniformities of less than 3% for etch diameters of up to 250 mm are obtained. Etch rates in excess of 100 nm/min for NiFe or silicon dioxide are achievable. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1148742
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