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  • 1
    Electronic Resource
    Electronic Resource
    The plasma waveguide with a finite thickness of cladding (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6653-6662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of the plasma waveguide of finite thickness (plasma tube) have been studied. The analysis indicates that, in the case of finite thickness, most of the properties for the plasma waveguide with infinite thickness are retained. At high frequencies, such a plasma tube is still a nondispersive waveguide system. The losses due to the finite thickness of the cladding and the conductivity of the plasma are both small. The decay coefficient decreases with the thickness exponentially. With a thickness equal to the radius of the central core, the attenuation can be as low as 0.1 dB/km.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349837
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  • 2
    Electronic Resource
    Electronic Resource
    Plasma waveguide: A concept to transfer electromagnetic energy in space (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6827-6835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper studies the possibility of using a laser-generated "plasma waveguide'' to transfer electromagnetic (EM) energy. The plasma waveguide is a cylindrical vacuum core surrounded by a plasma cladding. The analysis shows that guided-mode fields do exist inside the core. Like a general dielectric waveguide, the plasma waveguide is characterized by a "normalized frequency parameter'' (also called the V number). Although the permittivity of the plasma varies strongly with frequency, the V number surprisingly remains constant over the entire frequency range. Because of this property, the frequency dependence of the plasma waveguide is different; it has a wider high-frequency response than the general dielectric waveguide. The EM pulse can propagate in the plasma waveguide at close to the speed of light and keep its profile and shape unchanged. When the V number is smaller than 2.4048 (the first root of the zero-order Bessel function), only the single HE11 mode exists in the plasma waveguide. Unlike the dielectric waveguide, however, there is no high-frequency limitation for single-mode propagation. The EM fields outside the core in the plasma decrease exponentially with increasing radius. Thus, practically, a plasma cladding of sufficient thickness is all that is required to confine the EM wave. Such a plasma waveguide can be generated by a hollow laser beam in upper space and used for guiding EM pulses. A brief survey on laser-generated plasmas is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347672
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: "The properties of the electromagnetic missile'' [J. Appl. Phys. 66, 4025 (1989)] (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3047-3047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347203
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  • 4
    Electronic Resource
    Electronic Resource
    Spherical reflector as an electromagnetic-missile launcher (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1-7 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A spherical reflector illuminated by a point source is found to be capable of launching an electromagnetic missile. Since the surfaces of the reflector are not complete spherical surfaces, the problem cannot be solved by simple boundary matching. The electromagnetic fields have to be solved in three regions separately. The general solutions are matched on the boundaries to obtain a set of coefficient equations. Under the conditions for an electromagnetic missile, the coefficient equations are solved asymptotically. The evaluation of the Poynting vector shows that the energy radiated from the reflector has the same slow rate of decay as for the spherical lens.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347115
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  • 5
    Electronic Resource
    Electronic Resource
    The universal current distribution near the end of a tubular antenna (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 2721-2729 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: An asymptotic solution for the charge density and current near the end of a linear tubular antenna is obtained by means of the Wiener–Hopf technique. It is found that, due to the charge-repulsion effect, the distributions of charge per unit length and of current within a distance of the order of the radius from the end are significantly different from the sinusoidal distributions that are the solutions from approximate theories. Furthermore, the relative distributions are independent of the length of the antenna and of the frequency of operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528505
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  • 6
    Electronic Resource
    Electronic Resource
    Spherical lens as a launcher of electromagnetic missiles (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4036-4040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A uniform dielectric sphere, under transient excitation by a point source, is found to be capable of launching an electromagnetic missile, i.e., there is a direction where the decay of the total energy transmitted to a receiver is slower than r−2. The conditions for the presence of an electromagnetic missile have a natural interpretation, which in turn leads to a classification of electromagnetic missiles according to the singularities of differentiable maps in two dimensions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339115
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  • 7
    Electronic Resource
    Electronic Resource
    Curved electromagnetic missiles (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2604-2610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An interesting topic has been the possible behavior of transient fields in the limit of great distances from their sources. Under the physical restriction that the total energy radiated is finite, it has been shown that the energy reaching a distant receiver can decrease with distance much more slowly than the usual r−2. Such cases of slow decrease have been referred to as electromagnetic missiles. All of the wide variety of known missiles propagate in essentially straight lines. It is shown here that such a missile can follow a path that is strongly curved. An example of a curved electromagnetic missile is explicitly constructed and some of its simpler properties are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342790
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  • 8
    Electronic Resource
    Electronic Resource
    Generalized analysis of the spherical lens as a launcher of electromagnetic missiles (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5647-5653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is found that, like the directly transmitted radiation field previously investigated, an internally multiply reflected radiation field can also become an electromagnetic missile under certain different electromagnetic-missile conditions. The analysis is carried out in a general way, i.e., for the point source located either inside or outside the dielectric sphere. The electromagnetic-missile conditions are obtained for general multiply reflected radiation fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340347
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  • 9
    Electronic Resource
    Electronic Resource
    Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor deposition process (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1790-1792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we will present the electrical and reliability characteristics of ultrathin oxynitrides (65–73 A(ring)) formed by thermal nitridation of silicon substrate followed by deposition of silicon dioxide by low pressure chemical vapor deposition (LPCVD) technique. The dielectric integrity has been compared to those of the conventional thermal oxide and reoxidized nitrided oxides. It has been found that the new oxynitrides have lower electron trapping, higher charge-to-breakdown, and lower interface state generation under electrical stress even in comparison to reoxidized nitrided oxides with the same thermal budget. The improved characteristics are believed to be due to the combination of the nitrogen-rich layer at the Si/SiO2 interface, the higher quality of LPCVD oxides over thermally grown oxides, and the reduced hydrogen concentration in the dielectrics in comparison to conventional nitrided oxides. The results indicate that these new oxynitride films may be promising for ultra large scale integrated metal-oxide-semiconductor device applications, especially in cases where low thermal budget processes are desirable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108428
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical characteristics of oxynitrides grown on textured single-crystal silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 445-447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of oxynitrides grown on textured single-crystal silicon are discussed in this letter. This study compares the I-V, C-V, charge trapping, interface state generation, and breakdown characteristics of this new gate dielectric with those of oxides and oxynitrides grown on untextured silicon, and oxides grown on textured silicon. Textured oxynitrides were found to have enhanced conduction and significantly reduced interface state generation. Furthermore, they exhibit an improved immunity to charge trapping under high-field stress, and a significantly higher charge-to-breakdown QBD compared to the textured oxides. These properties make the textured oxynitride a promising gate dielectric for applications in electrical-erasable programmable read-only memories (EEPROMs).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106629
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