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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4092-4094 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Te codoping in ZnS:CeF3 thin-film electroluminescent devices are reported. ZnS1−xTex:CeF3 thin films are prepared at several Te concentrations and substrate temperatures. The emissive peak position and intensity depend on Te concentrations, substrate temperatures, the annealing, and drive voltages.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3691-3695 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) signal of n-type GaAs grown by molecular-beam epitaxy has been systematically studied as a function of modulation frequency in the PR measurements. The trap activation energy obtained from analysis of the frequency response of PR signal with its temperature dependence is 0.34 eV. The dramatic change in the frequency response has been observed as a function of the modulation (ac) and bias (dc) light intensities. The theoretical analysis has been made by assuming a single level electron trapping model. The calculated result shows a good agreement with the experimental data. Furthermore, photoluminescence spectrum associated with the deep level of the molecular-beam-epitaxy-grown GaAs was measured and compared with the PR data.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5309-5313 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) spectroscopy has been used to study the surface Fermi level in GaAs by taking account of photovoltaic properties at the semiconductor surface. The PR signal amplitude ||ΔR/R|| is proportional to a modulating photovoltage Vm generated by a modulation light irradiation. To modify the surface potential, the sample was irradiated by a third perturbing light, i.e., a continuous bias light Pb, together with the modulation light. The modulation light power dependence of ||ΔR/R|| is extremely sensitive to bias light intensity, surface Fermi level, and temperature. From the analysis of the temperature dependence of ||ΔR/R|| on modulation-light power, the surface Fermi level of 0.47±0.09 eV below the conduction band was determined for a molecular beam epitaxially-grown GaAs(100).
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3846-3851 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3186-3193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photocurrent multiplication has been observed in a hydrogenated amorphous silicon-based p-i/a-SiN:H/i-n structure junction under a reverse biased condition. A systematic investigation on the photocurrent characteristics in this junction system has been carried out. It has been shown from the analysis of the results that multiplication arises from the interband tunneling injection of valence band "electron'' through the a-SiN:H barrier layer. A device modeling on the basis of the experimental data permits us to design the device structure for achieving better performances. As a preliminary optimization of device structure, an external quantum efficiency exceeding 70 has been obtained under the operation voltage 30 V in the heterojunction photodiode having an a-SiN:H (thickness of 40 nm with optical energy gap 2.1 eV) at the p a-SiC:H/i a-Si:H interface. The proposed highly sensitive photomultiplier device might have a wide variety of application fields such as a solid-state imager for high-definition televisions, etc.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2492-2504 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical formulas accounting for the excitation and deexcitation processes of the alternating current-driven thin-film electroluminescent devices have been obtained, which include both the impact excitation and the energy-transfer mechanisms. The empirical equations for the conduction current duration time and the luminescent decay time related to the tunneling emission of electrons at the interface, the capture of holes in traps, and the light emission of luminescent centers lead to the analytical formulas for the transferred charge ΔQ, the luminance L, and other quantities of physical interest as a function of the electric field. The estimates for ΔQ and L in ZnS:Mn and ZnS:TbF3 devices have been made on the basis of Wolff's distribution function and found to be in good agreement with the experimental data. From the estimated results, it is found that the energy-transfer mechanism depends on various material parameters and drive conditions, and that it plays a role in improvement of the luminance in the low-electric-field region. In the high-electric-field region of interest, the energy transfer from Cu-related sensitizers to luminescent centers in ZnS:Mn and ZnS:TbF3 devices yields an increase of luminance by a factor of about 1.5 and 3, respectively.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4877-4883 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS:TbOF and ZnS:TmOF active layers for thin-film electroluminescent devices were deposited in oxygen atmosphere by an electron-beam evaporation method and the effects of oxygen in active layers on electroluminescent (EL) characteristics were studied. With increasing oxygen deposition pressures, the luminance and the luminescent decay time increased and the threshold voltage shifted to lower values in ZnS:TbOF devices, while they showed no notable variations in ZnS:TmOF devices. X-ray-diffraction studies for ZnS thin-films showed that by the deposition in oxygen atmosphere the film orientation of (111) plane, the film uniformity, and the grain size are improved. By an analysis based on the Auger electron spectroscopy spectra for ZnS thin films and EL emission spectra, it was confirmed that a small amount of oxygen is incorporated into films and suppresses the recombination related to zinc and sulfur vacancies. It was found that contrary to ZnS:TmOF devices, ZnS:TbOF devices show a change in the peak intensity of EL spectra by oxygen doping. From the experimental results, it is suggested that in ZnS:TbOF devices oxygen doping could give rise to the increase of the luminance due to a suppression of the nonradiative energy transfer via grain boundaries and/or vacancies, whereas in ZnS:TmOF devices it plays no role in such a mechanism. The effect of oxygen doping on interfaces is also discussed.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2841-2850 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel spectroscopy technique based on modulated photoconductivity measurements with varying illumination level has been applied to investigate the capture coefficients and the energy distribution of defect states in undoped amorphous silicon. From the experimental data, charged and neutral defect distributions are clearly resolved according to their own capture coefficients. The carrier capture process as well as the defect formation mechanism are both quantitatively discussed.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1752-1754 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxGa1−xAs films have been grown by molecular beam epitaxy on graphoepitaxially grown germanium films on nickel replica sheets fabricated from an anisotropic etched silicon (001) surface. The crystallographic and optical properties of the InxGa1−xAs films have been characterized. The crystallographic orientation of the heteroepitaxial InxGa1−xAs has a small deviation from the orientation of synthesized surface relief in the graphoepitaxial substrate. This deviation in the heteroepitaxial film is caused by misorientation of the crystallographic orientation during the graphoepitaxial growth of germanium. The energy gap of the InxGa1−xAs has also a slight deviation from the expected one. The mechanism and its evidence have been studied.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 583-585 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the electroreflectance spectra of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy. As a result, it has been found that there exist anomalous structures in the region of the E0 and E1 band edges of this material. These anomalous structures are closely related to the recently reported ordered phase in this alloy, since these structures have never been observed with disordered Ga0.5In0.5P alloys such as bulk crystals and epitaxial layers grown by liquid phase epitaxy.
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