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Etching of metals by means of organic radicals (1986)

Haag, Christa ; Suhr, Harald

Springer

Plasma chemistry and plasma processing 6 (1986), S. 197-203

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ISSN: 1572-8986

Keywords: Plasma etching ; organic radicals ; metallorganic compounds

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology

Notes: Abstract A new method for the etching of In, Sn, Pb, Sb, Bi, and Zn films in methane and acetone discharges was examined with respect to various parameters such as electrode temperature, power density, bias, and reaction period. The etching species are assumed to be CH3 radicals forming a volatile metallorganic compound, since etch rates in hydrogen plasmas or argon sputter rates are orders of magnitude lower. Etch rates up to 1600 Å/min could be obtained.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00575128

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