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  • 1
    Electronic Resource
    Electronic Resource
    Thermal effects on surface Fermi level for GaAs(001) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7785-7789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal effects in a high vacuum on horizontal Bridgman grown GaAs(001) surface prepared by deoxygenated and de-ionized water treatment were investigated by x-ray photoelectron spectroscopy, low-energy electron diffraction, ultraviolet photoelectron spectroscopy, and photoluminescence (PL) measurement. The ultraviolet photoelectron spectra show that, below 450 °C, the surface Fermi level lies at almost 0.85–1.0 and 0.68–0.8 eV above the valence-band maximum, respectively, for lightly and highly Si-doped GaAs surfaces. Above 480 °C, the surface Fermi levels of both the surfaces gradually come close to 0.45–0.54 eV above the valence-band maximum even though the surface keeps the 2×4 structure. PL measurements suggest that the surface Fermi level position is strongly affected by arsenic and gallium vacancies created near the surface during thermal processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362385
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of dissolved oxygen in a de-ionized water treatment on GaAs surface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1798-1803 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a new passivation method with an As and/or hydrogenated As layer on a GaAs surface. X-ray photoelectron spectroscopy was employed to investigate the influences of dissolved oxygen on a GaAs surface during the de-ionized water treatment. It is shown that reduction of dissolved oxygen in de-ionized water accelerates the removal of Ga and As oxides from the surface, and that the de-ionized water treatment in an extremely low concentration of dissolved oxygen produces arsenic and/or hydrogenated arsenic layer due to the liberation of Ga atoms near the surface. These phenomena are discussed based on the chemical reaction between the GaAs surface and dissolved oxygen in de-ionized water. The arsenic and hydrogenated arsenic layer is available for preserving the oxide-free and damage-free GaAs surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356372
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  • 3
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction observation of GaAs surface-prepared ultrasonic running de-ionized water treatment (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2794-2796 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs (001) surface ultrasonically cleaned under running de-ionized water (U-RDIW) is investigated by reflection high-energy electron diffraction (RHEED). The RHEED observations of U-RDIW-treated surfaces show a spotty (1×1) pattern at room temperature and a (2×1) streaky surface reconstruction pattern at 360 °C. The experimental results indicate that chemically clean and damage-free GaAs surfaces can be produced by U-RDIW treatment. We discuss surface structures before/after heating using a hydrogen- terminated model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104764
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  • 4
    Electronic Resource
    Electronic Resource
    Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surface (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1661-1666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of crystal defects near the surface on the position of surface Fermi level (EFS) are investigated using photoluminescence (PL) measurements and synchrotron radiation photoelectron spectroscopy (SRPES). For the lightly Si-doped GaAs(001) surface, PL measurements reveal that after heating to 500 °C a layer with lower PL peak intensities related to gallium vacancies than those of the bulk exists just under the thermal degraded layer. SRPES shows that EFS moves upward to 1.1–1.17 eV above the valence band maximum when this thermal degraded layer is removed by chemical etching and the excess arsenic on the surface, which is formed by rinsing the etched surface with deoxygenated and deionized water, is evaporated by heating in ultrahigh vacuum (UHV). After evaporation of excess arsenic on the surface by heating, the etching-depth dependence of EFS for a sample preheated in UHV correlated with the existence of this defect concentration layer. These results suggest that the position of EFS for the GaAs(001) surface is strongly influenced by crystal defects near the surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365965
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  • 5
    Electronic Resource
    Electronic Resource
    Film deposition temperature dependence of electron mobility for accumulation-mode InP metal-insulator-semiconductor field-effect transistors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1328-1337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of substrate temperature during film deposition on semi-insulating InP metal-insulator-semiconductor field-effect transistor characteristics are reported. The substrate temperature during film deposition, Ts, has a large influence on elastic and inelastic electron scattering times. With decreasing Ts, effective mobilities measured at room temperature and at 77 K increase, and the temperature dependence of effective mobility is more clearly observed. Electron scattering by neutral impurities is calculated in order to estimate the number of scattering centers near the InP surface, and to determine the activation energy (Ea=0.3±0.1 eV) of phosphorus migration (i.e., P hopping). Hikami–Larkin–Nagaoka's theory [Prog. Theor. Phys. 63, 707 (1980)] is applied to negative-magnetoresistance data measured at low temperature and in the low induced electron density region to estimate the electron inelastic scattering times. The substrate temperature dependence of inelastic scattering time is discussed in terms of Anderson localization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343029
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of electron mobility for inversion-mode InP metal-insulator-semiconductor field-effect transistors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 277-283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface carrier transport of electrons in inversion-mode InP metal-insulator-semiconductor field-effect transistors (MISFETs) has been investigated. This was carried out as a function of induced electron density with temperature ranging between 7 and 296 K. InP MISFETs were fabricated by using a photochemically deposited phosphorous nitride (PN) film as a gate insulator. Results of these studies indicate that electron mobility depends on temperature as T−(1–1.5) and on induced electron density as N−1/3s above Ns =5×1011/cm2 from 296 to 100 K. Below 60 K and in the low Ns region, electron mobility has a different temperature dependence and dramatically decreases as temperature decreases. These temperature and induced electron density dependences of electron mobility are probably caused by acoustic surface phonon scattering in the high-temperature region and by screened Coulomb scattering and Anderson localization of electrons in the low-temperature region. In the temperature range of 70–90 K, the maximum value for effective mobility was about 9000 cm2/V s and that for field-effect mobility was about 15 000 cm2/V s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338817
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  • 7
    Electronic Resource
    Electronic Resource
    Etchant dependence of surface reconstructions of GaAs surfaces prepared by ultrasonic-running de-ionized water treatment (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3410-3412 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (001) GaAs surfaces treated with ultrasonic-running de-ionized water (U-RDIW) after NH4OH/H2O2/H2O etching are investigated by reflection high-energy electron diffraction (RHEED) and by x-ray photoelectron spectroscopy (XPS). RHEED observations show a spotty (1×1) pattern lying on the 0-th Laue circle at room temperature, a (2×4) streaky pattern at 310 °C, and a spotty (3×6) pattern after annealing at 370 °C. We discuss the difference in surface stoichiometry after U-RDIW between the H2SO4- and NH4OH-etched surfaces based on the results of XPS. The experimental results indicate the possibility of controlling the surface stoichiometry of the U-RDIW-treated GaAs surfaces by varying the etching solution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105691
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  • 8
    Electronic Resource
    Electronic Resource
    Synchrotron radiation photoelectron spectroscopy study for GaAs (001) surface prepared by deoxygenated and de-ionized water treatment (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2036-2038 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal effects on an n-type GaAs (001) surface prepared by deoxygenated and de-ionized water (DODIW) treatment are investigated by synchrotron-radiation photoelectron spectroscopy (SRPES) in the temperature range from room temperature (RT) to 500 °C. SRPES confirms there are no oxides. There is, however, excess elemental arsenic and/or hydrogenated arsenic on the surface before heating, which evaporates when heated in a high vacuum. SRPES also shows that the surface Fermi level lies almost 0.9 eV above the maximum of valence band before heating, and moves toward the midgap during heating. After cooling to RT, it returns to the near-flat band position (1.0 eV). These experimental results suggest that DODIW-treated GaAs (001) surface can attain a low-density surface state. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112785
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  • 9
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy study of GaAs(001) surface prepared by deoxygenated and de-ionized water treatment (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2837-2839 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents the scanning tunneling microscopy (STM) images of GaAs(001) surfaces prepared by deoxygenated and de-ionized water (DODIW) treatment. The STM images reveal that the missing-dimer rows and unit cells of the 2×4 structure and atomic-layer steps of Ga–As clearly appear after heating the samples above 500 °C in an ultrahigh vacuum. These experimental results suggest the DODIW treatment can attain atomically flat GaAs(001) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113446
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  • 10
    Electronic Resource
    Electronic Resource
    Schottky characteristics of GaAs surface cleaned by ultrasonic running deionized water treatment (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1936-1938 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky characteristics for n-type (001)-GaAs surfaces prepared by ultrasonic running deionized water treatment (URDIW) are investigated by measuring Schottky diodes. Schottky barrier height for the URDIW treated surfaces is more sensitive to the metal work function, and is smaller compared to those of the chemically etched surfaces. We discuss Schottky characteristics for the URDIW treated surfaces based on the hydrogen-terminated model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110606
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