ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Magneto-Raman scattering inp-type indium antimonide (1977)
    Springer
    Applied physics 14 (1977), S. 155-159 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report for the first time stimulated magneto-Raman scattering inp-type InSb. Two different Raman scattering processes were observed. The first one has a Raman shift of about 2cm−1/kG and is observed at magnetic fields up to 30kG. The other one is observable only at high magnetic fields above 30kG and shows Raman shifts between 1.2cm−1 and 3.0cm−1 with a tuning rate of about 0.2cm−1/kG. The first process can be interpreted either as spin-flip Raman scattering by photo-excited electrons in the conduction band or as Raman scattering by holes in the valence band involving transitions from heavy to light hole states. The other Raman shift observed seems to occur on account of transitions between the heavy hole ladders.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883083
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Optically-pumped stimulated recombination radiation inp-type InSb in high magnetic fields (1979)
    Springer
    Applied physics 20 (1979), S. 75-81 
    Details
    ISSN: 1432-0630
    Keywords: 78.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this paper measurements of the frequency, linewidth and polarization of stimulated recombination radiation (SRR) fromp-type InSb are reported. The samples had low excess-carrier concentrations between 1014 and 1015 per cm3 and different lengths between 0.4 and 9 mm. They were held in magnetic fields up to 6T at temperatures of pumped liquid helium. The excitation was done optically by the radiation of a Q-switched CO-laser. We could observe a number of different stimulated processes: a) band-to-band recombination (tuning between 1875 and 1980 cm−1), b) band-to-acceptor recombination (tuning between 1840 and 1930 cm−1), c) stimulated spin-flip Raman scattering (SFR) of the SRR by excited electrons, d) SFR of the laser by excited electrons and its interaction with the SRR. From the observed shift of the band gap by exchange and correlation energy the number of created electron-hole pairs can be calculated to be up to 1016 per cm3. The observed acceptor binding energy varies from 66 cm−1 atB=0 to 71 cm−1 at 4.5T.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00901790
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Nonlinear optical studies of relaxation times of carriers in MBE layers of PbSe and PbEuSe (1988)
    Springer
    Applied physics 47 (1988), S. 387-391 
    Details
    ISSN: 1432-0630
    Keywords: 72.80.Jc ; 42.65.Cq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Four wave mixing has been observed as a function of the difference frequency of two laser beams. Intraband energy relaxation rates were derived from a fit to the experimental data. This results in picosecond relaxation times for all samples at 77 K. The relaxation time of epitaxial material is comparable to that of bulk material at 300 K, but shorter at 77 K. PbEuSe shows smaller scattering times than PbSe, as expected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615503
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Raman-gain, linewidth, and effectiveg-value with spin-flip-Raman scattering in inSb (1978)
    Springer
    Applied physics 15 (1978), S. 53-57 
    Details
    ISSN: 1432-0630
    Keywords: 71.20 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this paper we report on measurements of spin-flip-Raman gain inn-InSb as a function of the magnetic field. The measurements were carried out at temperatures of 1.8 K and 4.2 K and at a carrier concentration of 1.35×1015 cm−3. The Raman cross sections obtained from these results, e.g. 1.25×10−20 cm2/sr at a magnetic field of 10 kG and a pump frequency of 1884.35 cm−1, agree very well with those theoretically predicted by Wherrett and Wolland. Furthermore, these measurements yield line shapes and linewidths of the spontaneous scattering (100–1500 MHz) and allow the determination of the effectiveg-value with an accuracy known from ESR-investigations. These results are discussed in terms of already published theoretical investigations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896890
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Nonlinear optical studies of relaxation times of carriers in MBE layers of PbSe and PbEuSe (1988)
    Springer
    Applied physics 47 (1988), S. 387-391 
    Details
    ISSN: 1432-0630
    Keywords: 72.80.Jc ; 42.65.Cq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Four wave mixing has been observed as a function of the difference frequency of two laser beams. Intraband energy relaxation rates were derived from a fit to the experimental data. This results in picosecond relaxation times for all samples at 77 K. The relaxation time of epitaxial material is comparable to that of bulk material at 300 K, but shorter at 77 K. PbEuSe shows smaller scattering times than PbSe, as expected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615503
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Measurement of spin-flip raman gain, effectiveg-value and absorption of radiation under transient electric field conditions in insb (1981)
    Springer
    Applied physics 26 (1981), S. 115-124 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We studied the change in Spin-flip Raman (SFR) gain and behaviour of the effectiveg-value as a function of pulsed electric fields inn-type InSb. The samples were held at 1.8 K in magnetic fields up to 1.4 T. Varying the strength of a pulsed electric field applied to the samples parallel to the magnetic field we found a direct correlation between the increase in electron temperature and the decrease of the Raman gain. Measurements of the Raman gain and spontaneous line width at different times after the starting of the electric pulse and during its fall time with a time resolution of 10 ns give no indication of a motional narrowing of the SFR line and of an increase of the gain during the decrease of the electric field pulse. These two predictions were made by Mooradian et al. (1972) to explain the observed transient increase of the intensity of the stimulated SFR Stokes radiation after an electric field across the sample was switched off. With our direct measurement of the Raman gain we could establish that at any time during and after the electric field pulse, the gain is less or equal to the value without electric field. In the electric field region from 0.3 V/cm up to 0.6 V/cm the Raman gain shows several maxima, originating from SFR scattering between different spin splitted conduction band levels. The electron distribution under pulsed electric field conditions give rise to a dynamically varying absorption mechanism of transmitted radiation. Time resolved transmission measurements explain the observed increase of stimulated SFR Stokes radiation during the switch-off time of electric field pulses by a lower absorption of radiation and not by a larger gain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616658
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Raman gain, effectiveg-value and spontaneous spin-flip Raman linewidth in Hg0.77Cd0.23Te (1983)
    Springer
    Applied physics 31 (1983), S. 195-199 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 ; 71.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on measurements of spin-flip Raman gain inn-Hg1−x Cd x Te (x=0.23, carrier density 1.0×1015cm−3) as a function of the magnetic field up to 1.6T. The measurements were carried out by a small signal gain technique at a temperature of 1.8 K. Furthermore, the measurements yield lineshapes and linewidths of the spontaneous scattering and allow a precise determination of the effectiveg-value. The highest gain observed is 0.2 cm/W. The band edge value of the effectiveg-value is −93.2 and the widths of the symmetric lines are between 18 and 120 G, depending on the magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614954
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Spin-flip Raman laser (1974)
    Springer
    Applied physics 5 (1974), S. 97-108 
    Details
    ISSN: 1432-0630
    Keywords: Spin-flip Raman laser ; Magneto-Raman scattering
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The properties of the spin-flip Raman laser (SFR laser) which depend on stimulated Raman scattering from mobile conduction electrons in InSb under an external magnetic field are presented. The essential parameters are derived from a macroscopic treatment of the stimulated Raman effect and the microscopic theory of the scattering cross-section, and are compared with experimental results. Output pulse powers as large as 1 kW have been measured for 10.6 and 5.3 μm excitation radiation and continuous powers of 1 W for continuous excitation with a 5.3 μm pump source. The SFR laser offers some interesting applications in physics and chemistry, since its frequency is proportional to the applied magnetic field and its linewidth can be made smaller than 1 kHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00928220
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Analyse von ultraroten Absorptionsspektren verschiedener Nitrat-Kristalle im Rahmen des Einzellen-Modells (1957)
    Springer
    The European physical journal 148 (1957), S. 262-280 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Zusammenfassung Die ultraroten Absorptionsspektren einiger wasserfreier und wasserhaltiger Nitratkristalle wurden bei verschiedenen Temperaturen und teilweise mit polarisiertem Licht gemessen. Dazu wurden Kristallplatten mit Dicken bis hinab zu 15μ hergestellt. Die beobachteten Banden werden mit Hilfe eines einfachen Modells auf die Normalschwingungen der NO3-Ionen und H2O-Molekeln zurückgeführt. Die Deformation der komplexen Bausteine und ihre Resonanzverstimmung in einer Kristallzelle werden beobachtet und theoretisch diskutiert. Das benutzte Ein-zellen-Modell gibt die Beobachtungen im allgemeinen richtig wieder, reicht jedoch nicht für die Beschreibung aller Einzelheiten aus.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01322798
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Über die Absorption des Quarzes im nahen Ultrarot (1960)
    Springer
    The European physical journal 160 (1960), S. 420-430 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Zusammenfassung Das Absorptionsspektrum des Kristallquarzes im nahen UR wird mit polarisiertem Licht bei Temperaturen zwischen −190° C und 550° C untersucht. Zwischen 2900 und 4000 cm−1 findet man 11 Einzelbanden, von denen drei eingebauten OH-Gruppen und acht dem Quarzgitter zuzuordnen sind. Von den 3 Zuständen der OH-Gruppen im Quarz ist der mit der kleinsten Schwingungszahl besonders stabil. Durch Elektrolyse in verschiedenen Gasatmosphären läßt sich die Wasserstoff-konzentration im Gitter zwischen Null und einem Sättigungswert beliebig variieren. Bei Neutronenbestrahlung entstehen neue Banden, die von OH-Gruppen auf Zwischengitterplätzen herrühren. Die Farbzentren im Quarz werden durch Wasserstoff beeinflußt.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01322105
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...