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    Electronic Resource
    Electronic Resource
    Optical control of the edge of the band gap of semiconductor layered Fabry-Perot type structures (2000)
    Springer
    Optics and spectroscopy 89 (2000), S. 418-421 
    Details
    ISSN: 1562-6911
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A mechanism of controlling light is studied, which is based on the change of refractive indices of narrow-gap layers in a semiconductor layered periodic Fabry-Perot type structure (superlattice) caused by the contribution of nonequilibrium charge carriers produced by controlling radiation. By choosing the wavelength of controlling light near the edge of intrinsic absorption of narrow-gap layers and by choosing the wavelength of controlled light near the edge of the band gap of a structure, one can obtain for 1.5-μm controlled radiation the modulation depth above 90%, with controlling radiation intensity of ∼6 kW/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1310711
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