Publication Date:
2012-10-27
Description:
Author(s): O. E. Raichev, G. M. Gusev, E. B. Olshanetsky, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, and J. C. Portal The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an unconventional behavior, different from the classical N-shape... [Phys. Rev. B 86, 155320] Published Fri Oct 26, 2012
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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