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  • 1
    Online Resource
    Online Resource
    Problem Solving Questions in Toxicology : A Study Guide for the Board and other Examinations (2020)
    Cham :Springer International Publishing :
    Details
    Keywords: Medicine Research. ; Biology Research. ; Pharmacology. ; Biomedical Research. ; Pharmacology.
    Description / Table of Contents: Part 1 General and Principles of Toxicology -- A Historical Glimpse and Stalwarts -- General Toxicology -- Principles of Toxicology -- Mechanism of Toxicity -- Part 2 Disposition and Kinetics -- Disposition of Toxicants -- Toxicokinetic of Xenobiotics -- Part3 Organ Toxicity -- Target Organ Toxicity -- Part4 Non-Organ-Directed Toxicity -- chemical carcinogenesis -- Genetic Toxicology -- Developmental Toxicology -- Part5 Toxic Agents -- Pesticides -- Metals and Micronutrients -- Solvents. Gasses and Vapors -- Toxicology of Nanomaterial Particles -- Toxic Effects of Calories -- Part6 Plants, Biotoxins and Food Poisonings -- Plant Toxicity -- Biotoxins and Venomous Organisms -- Poisonous Foods and Food Poisonings -- Part7 Radioactive Materials -- Radiation and Radioactive Materials -- Part8 Applications of Toxicology -- Food Toxicology -- Ecotoxicology -- Environmental Toxicology -- Analytical and Clinical Toxicology -- Occupational Toxicology. .
    Abstract: The book provides easy-to-understand diverse specialized topics in toxicology using self- study questions and answers. The answers are in the form of text along with custom made diagrams and explanations that help the student audience to understand and grasp the matter easily. Problem Solving Questions in Toxicology is written specifically as a study guide for the toxicology board and other examinations. .
    Type of Medium: Online Resource
    Pages: XV, 346 p. 46 illus., 27 illus. in color. , online resource.
    Edition: 1st ed. 2020.
    ISBN: 9783030504090
    URL: https://doi.org/10.1007/978-3-030-50409-0
    DOI: 10.1007/978-3-030-50409-0
    DDC: 610.72
    Language: English
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    E-BOOKS (AWI ONLY)
  • 2
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    The Virgo O3 run and the impact of the environment (2022)
    IOP
    Details
    Publication Date: 2024-05-03
    Description: Sources of geophysical noise (such as wind, sea waves and earthquakes) or of anthropogenic noise impact ground-based gravitational-wave interferometric detectors, causing transient sensitivity worsening and gaps in data taking. During the one year-long third observing run (O3: from April 01, 2019 to March 27, 2020), the Virgo Collaboration collected a statistically significant dataset, used in this article to study the response of the detector to a variety of environmental conditions. We correlated environmental parameters to global detector performance, such as observation range, duty cycle and control losses. Where possible, we identified weaknesses in the detector that will be used to elaborate strategies in order to improve Virgo robustness against external disturbances for the next data taking period, O4, currently planned to start at the end of 2022. The lessons learned could also provide useful insights for the design of the next generation of ground-based interferometers.
    Description: Published
    Description: 235009
    Description: 5T. Sismologia, geofisica e geologia per l'ingegneria sismica
    Description: JCR Journal
    Keywords: Gravitational waves ; ambient noise ; 04.06. Seismology
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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    PAPER (OA)
  • 3
    Electronic Resource
    Electronic Resource
    A simple high-resolution on-line x-ray imaging crystal spectrograph for laser–plasma interaction studies (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2644-2650 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple, high-resolution x-ray imaging crystal spectrograph is described for on-line measurements and analysis of x-ray emission from laser-produced plasmas in the wavelength range of ∼5–12 Å. The spectrograph uses a planar TAP crystal for dispersion and a phosphor-coated optical fiber plate followed by an image intensifier and a charge-coupled device camera for detection. The spectrograph covers a wavelength range of ∼1.4 Å in a single shot about a desired wavelength setting with a spectral resolution of ∼0.012 Å. It also has a design flexibility to cover the full spectral range of 5–12 Å in a single shot with a spectral resolution of ∼0.040 Å. The spectrograph is particularly suited for studies involving low vacuum environment, e.g., plasma interaction with a background gas, laser interaction with a gas jet, etc., which preclude the use of other on-line detectors such as open-ended microchannel plates. An example of space resolved x-ray emission from laser-produced magnesium plasma expanding in a helium gas is also presented. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150670
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  • 4
    Electronic Resource
    Electronic Resource
    Microprocessor based interface unit for coupling a picosecond laser oscillator with external laser amplifiers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2459-2462 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A microprocessor based interface unit for coupling a commercial picosecond Nd:YLF laser oscillator amplifier to external high power Nd:phosphate glass laser amplifier stages is described. The system generates charging and firing signals required for the picosecond oscillator, and also carries out the charging and firing sequence of external amplifiers for a single shot or a repetitive mode of operation. The electronics developed is simple and modular, with sufficient scope for expansion of the system, and resistant to electromagnetic interference. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147197
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  • 5
    Electronic Resource
    Electronic Resource
    Adsorption and desorption kinetics for SiCl4 on Si(111)7×7 (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 2827-2835 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption and desorption kinetics for SiCl4 on Si(111)7×7 were studied using laser-induced thermal desorption (LITD) and temperature programmed desorption (TPD) techniques. TPD experiments monitored SiCl2 as the desorption product at approximately 950 K using a heating rate of β=9 K/s. SiCl2 was also observed as the desorption product in the LITD yield at all surface coverages. LITD measurements determined the initial reactive sticking coefficient (S0) of SiCl4 on Si(111)7×7 versus surface temperature. The sticking coefficient was observed to decrease with surface temperature from S0≈0.18 at 160 K to S0≈0.03 at 600 K. TPD experiments revealed that the chlorine surface coverage saturated after large SiCl4 exposures and the saturation coverage was independent of surface temperature. Isothermal LITD studies enabled the surface chlorine coverage to be monitored as a function of time during SiCl2 desorption. These studies revealed second-order desorption kinetics for SiCl2 with a desorption activation barrier of Ed=67±5 kcal/mol and preexponential of νd=3.2×100±0.1 cm2/s. Experiments with preadsorbed hydrogen demonstrated that the initial sticking coefficient of SiCl4 was reduced as a function of increasing hydrogen coverage. This behavior indicated that the adsorption of SiCl4 on Si(111)7×7 requires free surface dangling bonds. LITD techniques were also used to study the surface diffusion of the chlorine on Si(111)7×7 after SiCl4 adsorption. No evidence of significant surface chlorine mobility (D≤2×10−11 cm2/s) was found for surface temperatures as high as 825 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458868
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  • 6
    Electronic Resource
    Electronic Resource
    Ablation parameters in KrF laser/plasma interaction: An experimental study (1987)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 179-185 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental measurements of ablation parameters in a KrF laser produced aluminum plasma are presented for the laser intensity range of 1011–1013 W/cm2. Plasma created from large focal spots shows single broad ion current pulses as compared to two groups of ions observed from small focal spots. Detailed analysis of the velocity distributions of emitted ions is carried out to understand this behavior and its effect on measurements of the ablation parameters. Scalings with laser intensity of the mass ablation rate (m(overdot)∼I0.42L) and of the ablation pressure (Pa∼I0.81L) giving m(overdot)=1.5×105 g cm−2 sec−1 and Pa=5.5 Mbar at a laser intensity of 1013 W/cm2 are obtained. The results are found to be in good agreement with the predictions of a plasma ablation model based on inverse bremsstrahlung dominated absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.866167
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray luminosity time-of-flight spectrometer for laser-produced plasmas (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1076-1080 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple and compact x-ray luminosity time-of-flight spectrometer for measurements of the velocity distribution of highly charged ions in laser-produced plasmas is presented. The spectrometer is based on making time- and space-resolved measurements of x-ray line emission from these ions in the expansion zone. Design, operation, and performance of this system are described. The spectrometer is useful in studying processes of interaction between highly charged ions and buffer gases, and nonthermal behavior of laser-produced plasma expansion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139729
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  • 8
    Electronic Resource
    Electronic Resource
    Lithographic properties of amorphous WO3 films exposed to photons, electrons, and hydrogen plasma (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4273-4276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lithographic properties of amorphous WO3 films exposed to photons, electrons, and glow-discharge hydrogen plasma have been investigated. It has been observed that the etching rates of the films in an alkaline solution are lower compared to the unexposed ones, giving rise to a negative tone behavior of the material. The etching characteristics as a function of exposure time and their correlation with the optical transmission have been studied. The contrast (γ) values obtained are 2.3 for photons, 4.0 for electrons, and 2.7 for hydrogen plasma. The sensitivity (S) values obtained are∼1021 photons /cm2 for photons and 10−3 C/cm2 for electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339101
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  • 9
    Electronic Resource
    Electronic Resource
    Plasma-processed Ag/P4Se10 (80° deposited) films as a negative resist (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4303-4305 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lithographic properties of Ag/P4Se10 (80° deposited) films exposed to photons and glow-discharge hydrogen plasma have been investigated. It has been observed that the etching rate of the exposed film is lower compared to the unexposed one, giving rise to a negative tone behavior of the material. The effect of exposure time on the etching rate and selectivity ratio has been studied. The contrast (γ) values obtained for the photoexposed and plasma-exposed negative resists are 2.9 and 5.1, respectively, with a photosensitivity of ∼1021 photons/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339109
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  • 10
    Electronic Resource
    Electronic Resource
    Thin films of amorphous MoO3 as a negative resist (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1527-1529 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lithographic properties of amorphous MoO3 films exposed to a glow discharge hydrogen plasma have been investigated. It has been observed that the etching rate of an exposed film in alkaline solution is lower compared to an unexposed one, giving rise to a negative tone behavior of the material. The etching characteristics as a function of exposure time and substrate temperature (during exposure) and their correlation with optical transmission have been studied. The contrast (γ) obtained is 4.2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98624
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