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  • 1
    Electronic Resource
    Electronic Resource
    Resonance effects in Josephson tunnel junctions with integrated tuning structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1403-1409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large-current steps have been found in the I/V characteristics of superconducting tunnel elements that are integrated within fixed tuning structures. The Josephson frequency at the steps corresponds to the operation frequencies of the different tuning structures at 345, 460, or 600 GHz. Therefore, these current steps are interpreted as resonance effects generated by an internal interaction of the Josephson oscillation with the tuning structure. The result of a spectrometer measurement around 350 GHz is in very good agreement with the resonance frequency obtained from the I/V characteristic. This confirms the interpretation of the current steps. A simple dc measurement is therefore sufficient to determine the actual resonance frequency of the tuning structure. It may be shifted with respect to the expected frequency, due to deviations of the junction size or other parameters from their required values. The exact knowledge of the resonance frequency is important for the application of these integrated tunnel elements as mixers in radioastronomical receivers. In single junctions a splitting of the resonance step into several branches was observed, whereas in two-junction arrays a splitting into two distinct states was found. Irregular switching appeared between these two states. The temperature and magnetic-field dependence of the current steps was investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355298
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  • 2
    Electronic Resource
    Electronic Resource
    Electric forming and telegraph noise in tunnel junctions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2564-2568 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The normal state resistance of Pb/Bi/In-oxide-Pb/Bi and Pb/Bi/In-oxide-Ag can be changed by applying sufficiently high voltage across the oxide barrier. To explain this effect we discuss an electrical dipole, a donor, a metal ion, and an oxygen migration model. The oxygen migration model best accounts for the experimental observations. Our investigations include telegraph noise measurements. A significant change in the low-frequency noise spectrum before and after electrical forming is found. It is possible to create and destroy two-level signals by applying an electric field on the order of 2.5×108 V/m.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353066
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal annealing properties of Nb-Al/AlOx-Nb tunnel junctions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3165-3168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The increase of the normal-state resistance of Nb-Al/AlOx-Nb tunnel junctions by annealing at elevated temperatures is reported. Junctions with an area of 4 μm2 or smaller have been investigated. The resistance could be increased up to a factor of 5 with only a small influence on the quality of the quasiparticle characteristic. The effect can be used to adjust the resistance after fabrication. The increase of the AlOx barrier thickness has been estimated. Annealing experiments in nitrogen atmosphere and after nitridation have been carried out in order to find out from where the additional oxygene stems. The annealing properties of anodization curves have been investigated. A clear increase of the oxide peak could be observed. The results also show that the resistance is sensitive to temperature increases in the various fabrication steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351479
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  • 4
    Electronic Resource
    Electronic Resource
    Double-barrier tunnel junctions for quasiparticle mixers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4097-4102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-barrier niobium tunnel junctions with the middle electrode thinner than the London penetration depth were fabricated. Their I-V curves, annealing behavior, response to external magnetic field, and response to 230 and 350 GHz irradiation in mixer experiments is discussed. Junctions with an integrated tuning circuit designed for the 230 GHz frequency range gave double-sideband receiver noise temperatures of 100 K. Vertically stack arrays can be attractive for various applications. Compared to single-barrier devices possible drawbacks were noted. The I-V curve indicates heating and/or nonequilibrium effects. Double-barrier devices became nonuniform after thermal annealing at 200 °C. The response to the external magnetic field is more complex and considerably larger flux densities are needed to suppress Josephson effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355988
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  • 5
    Electronic Resource
    Electronic Resource
    Superconductor-insulator-normal conductor tunnel junctions for frequency mixing around 300 GHz (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2113-2116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of superconductor-insulator-normal conductor tunnel junctions made from Nb-Al/ Aloxide-Al trilayers are described. These devices were successfully employed as quasiparticle mixers. The lowest double sideband receiver noise temperature in the 290–320 GHz band was about 140 K. The Nb wiring, which also defines the tuning circuit of the mixer, induces a small energy gap in the Al counter electrode at a physical temperature of 2.2 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360190
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  • 6
    Electronic Resource
    Electronic Resource
    Gap voltage of Nb-Al/AlOx-Nb tunnel junctions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 112-114 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gap voltage of Nb-Al/AlOx-Nb junctions was studied as a function of the Nb electrode thickness. The gap parameter increased with the electrode thickness. The I(V) curves of these junctions, employed as quasiparticle frequency mixers, are discussed. For 120-nm-thick Nb electrodes, a gap voltage 2Δ/e of 2.95 mV at 3 K is found in junctions with a critical current density of 2.5 kA/cm2. This is close to the ideal bulk value of Nb. The corresponding gap frequency of 714 GHz is clearly above 691 GHz, an important radioastronomical frequency. Complementary Tc measurements of Nb films have been carried out. The results agree with a model based on the proximity effect between the ideal metallic layer and a nonideal surface layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113051
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  • 7
    Electronic Resource
    Electronic Resource
    A niobiumnitride mixer with niobium tuning circuit (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4102-4104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports a low noise submillimeter-wave mixer using NbN tunnel junctions integrated in Nb matching circuits. The double side band receiver noise temperature was 245 K at 345 GHz. Plasma conditions for NbN film deposition on quartz substrates at room temperature are created by using a second Nb target as a selective nitrogen pump. Electrodes for tunnel junctions with critical temperatures above 15 K and normal state resistivities in the range from 130 to 160 μΩ cm were obtained. This permits integrating NbN junctions into normal metal or non-NbN superconducting matching circuits, which is of great interest for THz mixers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117832
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  • 8
    Electronic Resource
    Electronic Resource
    (.pi.-Allyl)palladium complexes of norcamphene. Structure and reactivity (1984)
    s.l. : American Chemical Society
    Organometallics 3 (1984), S. 21-28 
    Details
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/om00079a006
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  • 9
    Electronic Resource
    Electronic Resource
    Über die Herstellung spiegelnder Oberflächen (1922)
    Springer
    Naturwissenschaften 10 (1922), S. 117-119 
    Details
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01488539
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  • 10
    Electronic Resource
    Electronic Resource
    Mesozoische Epirogenese und Paläogeographie in den österreichischen Nordalpen (1937)
    Springer
    International journal of earth sciences 28 (1937), S. 438-447 
    Details
    ISSN: 1437-3262
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01889735
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