Publication Date:
2011-07-13
Description:
A unique configuration of PbZr 0.4 Ti 0.6 O 3 multilayer stack was designed and grown on F-doped tin oxide thin film by spin casting and annealing process. The multilayer system exhibits a broad reflection band with peak reflectivity over 95% and band width no 〈 40 nm, a dielectric constant of 520 and dielectric tunability of ~49% at 1 MHz, a remanent polarization of 46.8 μ C/cm 2 , and a polarization loss of 〈 5% after 10 9 polarization switching cycles, rendering excellent performance as 1D photonic crystals and as ferroelectric and dielectric media. This material structure may find application in photonic band-gap engineering, microwave tunable devices, and integrated optoelectronics.
Print ISSN:
0002-7820
Electronic ISSN:
1551-2916
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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