ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of varying the temperature (Tcr) of an As4→As2 cracker furnace between 600 and 700 °C on the properties of GaAs grown by molecular beam epitaxy has been evaluated using 4–300 K Hall measurements and 4.2 K far-infrared photoconduction spectroscopy, in an extension of earlier work on high-mobility material (Ref. 1). The residual donors are silicon and sulphur with mid-1013 cm−3 concentrations under As2-growth conditions (Tcr=700 °C). By lowering Tcr, the silicon concentration is reduced substantially, leaving sulphur as the principal impurity. A 15-μm-thick layer grown with Tcr=650 °C has measured free-electron densities of ≈2.8×1013 cm−3 and peak mobilities ≈4×105 cm2 V−1 s−1 at ≈28–42 K, the highest ever recorded in bulk GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104613
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