ISSN:
1432-0630
Keywords:
72.20
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Semiconductor response to ultrafast electric pulses was investigated both theoretically and experimentally. The possibilities for hot-electron drift velocity estimation from a pulsed electric conductivity measurement were analysed. An optoelectronic arrangement with time resolution of 20 ps was used to perform such measurements on then-InSb andn-InAs single crystals. Negative differential mobility (n.d.m.) was observed in both semiconductors at high electric fields.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00619393
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