Publication Date:
2015-06-10
Description:
A method for evaluation of aluminium composition in pseudomorphic Al x Ga 1− x N layer from the measured photoluminescence (PL) peak energy is presented here. The layers were grown by metalorganic chemical vapor deposition and characterized by high resolution X-ray diffraction (HRXRD), PL, cathodoluminescence, and atomic force microscopy. We estimated the value of biaxial stress in pseudomorphic Al x Ga 1− x N layers grown on sapphire and silicon carbide substrates using HRXRD scans. The effect of biaxial stress on the room temperature band edge luminescence in pseudomorphic Al x Ga 1− x N/GaN layers for various aluminium compositions in the range of 0.2
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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