ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Electronic devices grown by molecular beam epitaxy on a nanometer scale are presented. The use of a vertical device design in combination with delta-doping layers increases the performance of these devices. The vertical design offers the possibility of three dimensional device integration and allows the scaling of MOS field effect transistors down to its physical limits. The excellent crystal quality and doping profile is demonstrated by the very good performance of the grown devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00125889
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