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  • 1
    Electronic Resource
    Electronic Resource
    Photoelectric properties of n-CdS/p-InP heterojunctions (1998)
    Springer
    Semiconductors 32 (1998), S. 61-66 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The polarization method for studying photoactive absorption is used to investigate the photoconversion processes in CdS/InP heterojunctions as a function of the orientation of the indium phosphide substrate. The results of these investigations demonstrate the sensitivity of the photoelectric processes to several factors, including the crystallographic orientation of the p-type InP substrate and the optical quality of the CdS layer. The induced photopleochroism coefficient of these heterojunctions increases proportionally to the square of the angle of incidence (P I ∼Θ2). Such CdS/InP heterojunctions can be employed as polarization-photosensitive devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187360
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  • 2
    Electronic Resource
    Electronic Resource
    Photosensitivity of InP/CdS heterostructures in linearly polarized light (1997)
    Springer
    Semiconductors 31 (1997), S. 194-196 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Measurements have been made of the photosensitivity of (p + -p −)-InP/n +-CdS structures formed by the growth of indium phosphide and cadmium sulfide films on p +-InP substrates with (100) crystallographic orientation. These structures exhibit a photosensitivity S i ⋍0.13A/W in the spectral range from 1.3 to 2.4 eV at T=300 K. Polarizational photosensitivity was observed for oblique incidence of linearly polarized light on the CdS surface of these structures. The induced photopleochroism of these structures is governed by the angle of incidence θ. The photopleochroism increases proportionally to θ2 and its maximum value is found to be ∼50% at θ⋍75–80°. The maximum azimuthal photosensitivity was found to be ∼0.13A/W·deg. Structures consisting of CdS deposited on InP can be used as polarimetric photodetectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187106
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  • 3
    Electronic Resource
    Electronic Resource
    Photoelectric properties of ITO/p +-p −-InP solar cells in linearly polarized light (1998)
    Springer
    Technical physics 43 (1998), S. 546-549 
    Details
    ISSN: 1090-6525
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Indium phosphide heterostructures and transparent conducting films of wide-gap oxides have previously been used in the development of highly efficient solar cells, making it possible to bring their efficiencies up to 18% [M. M. Koltun, Optics and Metrology of Solar Cells [in Russian], Nauka, Moscow (1985); V. M. Botnaryuk, L. S. Gagara, L. V. Gorchak et al., Geliotekhnika 23, 37 (1990); V. Botnariuc, L. Gagara, E. Negru et al., Solar Energy in Romania 2(1), 53 (1993)]. In the present paper results are reported from the first studies of the photoelectric properties, in linearly polarized light, of solar cells consisting of a heterojunction between single crystal indium phosphide and a mixed indium and tin oxide film (ITO film, E g ≅3.6 eV [G. Check and A. Genis, Solid State Techol. 23(1), 102 (1980)]).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1259036
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