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  • 1
    Electronic Resource
    Electronic Resource
    Determination of the glass transition and nucleation temperatures in Ge2Sb2Te5 sputtered films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 697-702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Ge2Sb2Te5 films were prepared by rf sputtering from the bulk alloy. Their electrical and optical properties were analyzed using impedance and optical transmission measurements as a function of temperature. From this analysis, it is found that the glass transition temperature of the as-prepared amorphous films is of about 100 °C. This result is confirmed by calorimetric measurements. Impedance and optical measurements in films measured at temperatures between the glass transition and the crystallization temperatures show the appearance of the nucleation centers. Using models for two-phase materials, the electrical parameters of the crystalline and amorphous phases were estimated and related with structural parameters of the samples. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427146
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  • 2
    Electronic Resource
    Electronic Resource
    Drude-like behavior of Ge:Sb:Te alloys in the infrared (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 760-765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical transmittance of Ge:Sb:Te evaporated thin film alloys with different compositions was measured in the wavelength range from 2.5 to 34 μm. The as-deposited films with an amorphous structure were thermally crystallized to achieve the two known crystalline phases: the fcc and the hexagonal at higher treatment temperatures. There are drastic changes in the transmittance spectra of samples with different structural phase, which reflects the differences in their optical constants. For amorphous films, only the frequency independent term in Drude's formula is required to properly describe their transmittance spectra. For samples in the hexagonal and the fcc structures, the transmittance spectra show a metallic and semimetallic behavior, respectively; therefore, the full Drude expression has been used as the general dispersion relation for the optical constants of the films. The electrical conductivity deduced from the Drude expression shows a dependence on Sb concentration in good agreement with previously reported values measured on bulk single crystals. Furthermore, the n and k spectra obtained in the measured infrared range are in good agreement with the values in the visible-UV region, previously measured using spectroscopic ellipsometry. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371937
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of carbon films microstructure by atomic force microscopy and Raman spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3443-3447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic force microscopy has been used to study the surface irregularities of hydrogenated and unhydrogenated carbon films grown by rf-powered glow discharge and dc-magnetron sputtering, respectively. In general films produced with the latter technique have rougher surfaces. In glow discharge produced samples, roughness can be reduced by increasing rf power during deposition. In sputtered films surface roughness is reduced by either lowering substrate temperature or reducing the power density during deposition. The relation between the microstructure and the crystalline state was done using Raman scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357474
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  • 4
    Electronic Resource
    Electronic Resource
    Low temperature crystallization of sputtered carbon films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3015-3019 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization of amorphous carbon films, under inert atmospheres, occurs at annealing temperatures above 800 °C. In this work we have found that when the annealing of carbon films is performed under atmospheric conditions, crystallization occurs at temperatures as low as 200 °C. The catalytic effect of oxygen in the crystallization process is understood in terms of the generation of a porous structure in the carbon film due to the vaporization of carbon oxides. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360051
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal properties of CdTe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7217-7220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal diffusivity α and conductivity k at room temperature of CdTe semiconductors having different crystalline qualities were determined using a photoacoustic technique. Thermal measurements obtained for each sample were correlated with photoluminescence spectroscopic results in order to associate the observed variation of α and k with crystalline imperfections in CdTe. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358002
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of transition-metal elements on tellurium alloys for reversible optical-data storage (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4319-4322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tellurium-based alloys are being applied to phase-change, reversible optical-data storage. In order to improve the disk performances, research efforts have been concentrated on increasing the erase speed (crystallization rate) while maintaining good film stability. We report, for the first time, that certain transition-metal elements added to Te-alloy films can substantially improve the rate of crystallization without any reduction of the amorphous-phase stability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337476
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  • 7
    Electronic Resource
    Electronic Resource
    Optical properties of dense thin-film Si and Ge prepared by ion-beam sputtering (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 954-957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of ion-beam-sputtered Si and Ge have been measured using spectroscopic ellipsometry over the range of 2.5–5.0 eV. Measurements have been performed on films prepared at different substrate temperatures (Ts) . An analysis of the spectroscopic ellipsometry data using the Bruggeman effective medium approximation reveals that very dense polycrystalline Si ( p-Si) and Ge ( p-Ge) films are obtained (without postdeposition heat treatment) for Ts ≥350 °C and Ts ≥200 °C, respectively. Maintaining a sufficiently high Ar beam voltage in the sputtering process is shown to be beneficial to the densification of p-Si. Discrepancies observed between the structure of the p-Si deduced from Raman and ellipsometry spectra are also addressed. The ellipsometry data are effective in detecting heterogeneity possibly due to surface roughness for the p-Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336172
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical conductivity percolation in the (CdTe)1−xTex system (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3254-3256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical volume fraction for conductivity percolation in the di-phasic system (CdTe)1−x Tex has been determined using atomic force microscopy. The onset for rapid increase in the electrical conductivity is found at a volume fraction of Te of about 0.4. According to previous theoretical calculations this value is characteristic of a system with two-dimensional symmetry. It is also found that the Te phase grows in the form of columns, which explains the observed critical volume fraction value for percolation in the conductivity measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112429
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  • 9
    Electronic Resource
    Electronic Resource
    Improved structural properties of SiO2 sol-gel films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3192-3194 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon oxide films with a small amount of alpha alumina particles embedded in the glass matrix were prepared using the sol-gel method. It is found that the structural properties of these samples are superior to those observed in similarly prepared films, but without the alumina particles. This conclusion was deduced from analysis of the oxygen diffusion measurements through the SiO2 layer, using a novel method, and from the measured dielectric breakdown field. It is found that the oxygen diffusion coefficient is much lower and the dielectric breakdown field is larger in samples with the alumina particles. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125274
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  • 10
    Electronic Resource
    Electronic Resource
    Milling and Processing Parameters for Corn Tortillas from Extruded Instant Dry Masa Flour (1998)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 63 (1998), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: A continuous extrusion process to provide instant corn flour for tortillas was evaluated. Variables investigated included two types of mill (knives and hammer) with screens with two diameters (0.5 and 0.8 mm), two types of corn (hard endosperm or normal and soft endosperm or cacahuazintle), lime concentration (0.15 and 0.25% w/w), processing moisture (45 and 48% w/w) and temperature (70,80 and 90°C). The water absorption capacity, water solubility index, color of instant corn flour, adhesiveness of masa, tensile strength, cutting force, rollability and puffing of tortillas, were compared. Based on textural data the hammer mill with 0.8 mm sieve, normal corn type, 0.15% lime, 48% moisture and 90°C processing temperature, produced the highest quality tortillas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1998.tb15737.x
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