ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Analytical expressions for the electron wave functions, the low-signal, high-frequency conductance, and the widths of the energy levels (minibands) in a asymmetric double-barrier structure with thin barriers are obtained under conditions of coherent electron tunneling strictly along the centers of the energy levels and with the electron energies deviating from exact resonance. It is shown that an electron transmittance equal to 1 and a substantial increase in the integrated (taking into account the energy distribution of the electrons incident on the structure) rf conductance of the structure can be obtained by choosing the appropriate arrangement of the minibands of the structure relative to the conduction band bottom of the semiconductor materials to the left and right of the structure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187153
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