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  • 1
    Electronic Resource
    Electronic Resource
    Effect of film thickness on the properties of indium tin oxide thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6021-6025 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent conducting indium tin oxide (ITO) thin films (40–870 nm) were grown by pulsed laser deposition on amorphous substrates and the structural, electrical, and optical properties of these films were investigated. Films were deposited using a KrF excimer laser (248 nm, 30 ns FWHM) at a fluence of 2 J/cm2, at substrate temperature of 300 °C and 10 mTorr of oxygen pressure. For ITO films (30–400 nm thickness) deposited at 300 °C in 10 mTorr of oxygen, a resistivity of 1.8–2.5×10−4 Ω cm was observed and the average transmission in the visible range (400–700 nm) was about 85%–90%. The Hall mobility and carrier density for ITO films (40–870 nm thickness) were observed to be in the range of 24–27 cm2/V s and 8–13×1020 cm−3, respectively. The ITO films have been used as the anode contact in organic light emitting diodes and the effect of ITO film thickness on the device performance has been studied. The optimum thickness of the ITO anode for the maximum device efficiency was observed to be about 60–100 nm. The device with the optimum thickness of ITO anode showed an external quantum efficiency of about 0.85% at 100 A/m2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318368
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6451-6461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality indium–tin–oxide (ITO) thin films (200–850 nm) have been grown by pulsed laser deposition (PLD) on glass substrates without a postdeposition annealing treatment. The structural, electrical, and optical properties of these films have been investigated as a function of target composition, substrate deposition temperature, background gas pressure, and film thickness. Films were deposited from various target compositions ranging from 0 to 15 wt % of SnO2 content. The optimum target composition for high conductivity was 5 wt % SnO2+95 wt % In2O3. Films were deposited at substrate temperatures ranging from room temperature to 300 °C in O2 partial pressures ranging from 1 to 100 mTorr. Films were deposited using a KrF excimer laser (248 nm, 30 ns full width at half maximum) at a fluence of 2 J/cm2. For a 150-nm-thick ITO film grown at room temperature in an oxygen pressure of 10 mTorr, the resistivity was 4×10−4 Ω cm and the average transmission in the visible range (400–700 nm) was 85%. For a 170-nm-thick ITO film deposited at 300 °C in 10 mTorr of oxygen, the resistivity was 2×10−4 Ω cm and the average transmission in the visible range was 92%. The Hall mobility and carrier density for a 150-nm-thick film deposited at 300 °C were 27 cm2/V s and 1.4×1021 cm−3, respectively. A reduction in the refractive index for ITO films can be achieved by raising the electron density in the films, which can be obtained by increasing the concentration of Sn dopants in the targets and/or increasing deposition temperature. Atomic force microscopy measurements of these ITO films indicated that their root-mean-square surface roughness (∼5 Å) was superior to that of commercially available sputter deposited ITO films (∼40 Å). The PLD ITO films were used to fabricate organic light-emitting diodes. From these structures the electroluminescence was measured and an external quantum efficiency of 1.5% was calculated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371708
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  • 3
    Electronic Resource
    Electronic Resource
    Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 259-261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum-doped zinc oxide (AZO) thin films (∼3000 Å) with low electrical resistivity and high optical transparency have been grown by pulsed-laser deposition on glass substrates without a postdeposition anneal. Films were deposited at substrate temperatures ranging from room temperature to 400 °C in O2 partial pressures ranging from 0.1 to 50 mTorr. For 3000-Å-thick AZO films grown at room temperature in an oxygen pressure of 5 mTorr, the electrical resistivity was 8.7×10−4 Ω cm and the average optical transmittance was 86% in the visible range (400–700 nm). For 3000-Å-thick AZO films deposited at 200 °C in 5 mTorr of oxygen, the resistivity was 3.8×10−4 Ω cm and the average optical transmittance in the visible range was 91%. AZO films grown at 200 °C were used as an anode contact for organic light-emitting diodes. The external quantum efficiency measured from these devices was about 0.3% at a current density of 100 A/m2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125740
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  • 4
    Electronic Resource
    Electronic Resource
    AUTOIMMUNE DISEASES IN DOMESTIC ANIMALS (1965)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 124 (1965), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1965.tb18956.x
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  • 5
    Electronic Resource
    Electronic Resource
    Tumor inhibitors. LXXIII. Maytansine, a novel antileukemic ansa macrolide from Maytenus ovatus (1972)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 94 (1972), S. 1354-1356 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00759a054
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  • 6
    Electronic Resource
    Electronic Resource
    MITHRIL–an integrated direct-methods computer program (1984)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 17 (1984), S. 42-46 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A new direct-methods computer program, MITHRIL, is described. Written in a neutral subset of Fortran IV, it is built around a heavily modified MULTAN80 system. It incorporates many recent theoretical developments in direct methods including the use of quartet and quintet invariants, a new method for estimating triplets, YZARC and MAGEX, and random-phase tangent refinement. It can be run as a menu-driven interactive real-time package or in the more conventional batch mode. Several levels of user-program interaction are provided.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889884010992
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  • 7
    Electronic Resource
    Electronic Resource
    Developments in the MITHRIL direct methods program. Erratum (1989)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 22 (1989), S. 70-70 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Owing to a printer's error, the key reference of the paper by Gilmore & Brown [J. Appl. Cryst. (1988), 21, 571–572] was omitted. The reference is here given in full.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889888013871
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  • 8
    Electronic Resource
    Electronic Resource
    Solving structures with quartets: the least-squares analysis of quartet invariants in space group P1 (1977)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 33 (1977), S. 712-716 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: A least-squares technique for extracting individual phase angles from a set of quartet invariants is described. For symmorphic space groups, this procedure offers the advantages of stability and, in noncentrosymmetric cases, a systematic way of defining the enantiomorph, in contrast with traditional direct methods employing triplets. The application to a phthalic anhydride derivative C26H16O5 in space group P1 is described. The method is readily extended to other space groups.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567739477001831
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  • 9
    Electronic Resource
    Electronic Resource
    Structure of 2-furoic acid, C5H4O3: a redetermination (1983)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 39 (1983), S. 1111-1113 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S010827018300757X
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  • 10
    Electronic Resource
    Electronic Resource
    PLOTQ – a computer program for displaying electron densities and related functions in two and three dimensions (1990)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 23 (1990), S. 143-144 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889889011738
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