ISSN:
1572-8986
Schlagwort(e):
Plasma etching
;
iodine- and bromine-based dry etching
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Chemie und Pharmazie
,
Maschinenbau
,
Technik allgemein
Notizen:
Abstract Two novel plasma chemistries, BI 3 and BBr 3 , have been employed for dry etching of LaCaMnO 3 thin films. For both mixtures there is some chemical enhancement of etch rates at low halide compositions in the discharge, and the rates are a strong function of ion/neutral ratio. Maximum rates are obtained at ratios near 0.02. Etch yields are typically low (〈0.3) under inductively-coupled plasma (CICP) conditions. Smooth d surface morphologies are obtained over a wide range of conditions, with high-fidelity pattern transfer using SiO 2 or SiN x masks.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1023/A:1021643709200
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