ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
As a novel application of synchrotron radiation, we describe a growth technique for the II–VI compound semiconductors. A growth system suitable for synchrotron-radiation excited deposition has been designed and constructed in the beam line BL4A at the UVSOR facility. Characteristics of this growth system and experimental results with respect to ZnTe as an example are described. It has been confirmed by using the system constructed that this method is useful as a low-temperature growth technique for II–VI compounds. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1146051
Permalink