Electronic Resource
Chan, J. S.
;
Cheung, N. W.
;
Schloss, L.
;
[et al.]
Jones, E.
;
Wong, W. S.
;
Newman, N.
;
Liu, X.
;
Weber, E. R.
;
Gassman, A.
;
Rubin, M. D.
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 2702-2704
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter, we report the results of ion implantation of GaN using 28Si and 24Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 1014 cm−2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116314
Permalink
|
Location |
Call Number |
Expected |
Availability |