Publication Date:
2018-01-26
Description:
Author(s): L. Daukiya, M. N. Nair, S. Hajjar-Garreau, F. Vonau, D. Aubel, J. L. Bubendorff, M. Cranney, E. Denys, A. Florentin, G. Reiter, and L. Simon We obtained highly n -type doped graphene by intercalating terbium atoms between graphene and SiC(0001) through appropriate annealing in ultrahigh vacuum. After terbium intercalation angle-resolved-photoelectron spectroscopy (ARPES) showed a drastic change in the band structure around the K points of... [Phys. Rev. B 97, 035309] Published Thu Jan 25, 2018
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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