ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract GaAs/GaAIAs high-power window stripe lasers have been developed with a uniform active layer in the region adjacent to the device facets and with a curved active layer in the central region. A single-step liquid-phase epitaxy growth is used in the fabrication process to form two internal lateral current paths, so allowing for a very simple fabrication process. The optical coupling between the two stimulation emission regions reduces the beam divergence. The steady-state analysis of such a laser structure, including heating effects, agrees well with experimental results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00563219
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