Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 1039-1041
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Studies have been conducted on the etching characteristics of Si in a microwave plasma etching system having a pulse-modulated source. The experiments were performed at several pulse widths and duty cycles, as well as at cw, to determine how etch rate varied. Results indicate that the etch rate of Si increases and approaches that in a cw discharge as pulse width decreases even though total microwave energy is markedly reduced. Langmuir probe measurements suggest that these effects may be due to increased ionization early in the plasma pulse.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349689
Permalink
|
Location |
Call Number |
Expected |
Availability |