Publication Date:
2019-06-28
Description:
Improved fabrication of InGaAsP stripe lasers involves replacement of oxide stripe in quaternary laser by an n-type layer of InP grown on top of quaternary cap layer. Process allows use of stop etch that selectively removes InP and does not etch InGaAsP, making fabrication especially convenient.
Keywords:
FABRICATION TECHNOLOGY
Type:
LAR-12986
,
NASA Tech Briefs (ISSN 0145-319X); 8; 2; P. 285
Format:
text
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