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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1843-1845 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report significant improvement in the optical switching times of symmetric self-electro-optic effect devices due to enhanced tunneling by using a 35 A(ring) barrier versus the previous 60 A(ring) barrier thick multiple quantum well GaAs/AlxGa(1−x)As devices. Also, the voltage required for bistability was reduced from 10 V in the thick barrier devices to 3 V in the thin barrier devices with no apparent degradation in the contrast ratio.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 66-68 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that at room temperature the field-induced escape of photogenerated carriers out of shallow GaAs/AlxGa1−xAs multiple quantum wells is as fast as for pure GaAs of the same thickness, if the value of x does not exceed 0.04. Our experimental findings can be explained by assuming that carriers are efficiently scattered into the unconfined barrier states by absorption of a LO phonon, as long as the effective barrier height is less than the LO-phonon energy. The application of shallow quantum wells with x≤0.04 in self-electro-optic effect devices, providing not only strong excitonic electroabsorption but also fast sweep-out times at small biases, should lead to shorter switching times.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 430-432 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the saturation of optical absorption in GaSb at wavelengths close to the band gap, and have determined the nonlinear absorption (α2) and refraction (n2) coefficients. At liquid-helium temperature a sharp free-exciton absorption line is observed which saturates with increasing incident laser intensity; we obtain values ||α2||=70 cm W−1 and ||n2||≈0.2 cm2 kW−1. At room temperature we do not observe a well-defined exciton; saturation of the residual interband absorption occurs at much higher intensity, and it is found to be obscured by strong thermal effects.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2315-2317 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the heavy hole excitation saturation intensity in GaAs/AlGaAs quantum wells as a function of applied electric field and AlGaAs barrier design. We find that the saturation intensity increased with increasing applied field, and decreasing barrier thickness or height, because of increased carrier sweep-out rates. Time-resolved sweep-out time and temperature-dependent saturation intensity measurement point out the roles of both thermionic emission and tunneling in the field and barrier-dependent carrier escape time. By reducing the barrier Al composition from 30 to 20%, we achieved an increase in the saturation intensity by a factor of ∼6.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4287-4298 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the relaxation dynamics of highly excited GaxIn1−xAsyP1−y/InP with 5-ps resolution using a mode-locked 1.054-μm Nd:glass laser. Two samples with band gaps of 1.49 and 1.24 μm were studied at room temperature by the time-resolved nonlinear transmission and transient grating techniques. At excited carrier densities (approximately-greater-than)5×1018 cm−3 carrier relaxation times as short as 6 ps have been measured. The results are consistent with ultrafast decay by stimulated radiative recombination, and time-integrated luminescence measurements support this interpretation. We find no evidence for plasma expansion. At lower densities the carrier relaxation is determined by Auger and bimolecular recombination, and longer decay constants in the range 100–500 ps are measured.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2917-2919 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the vertical transport mechanisms in GaAs/AlxGa1−xAs multiple quantum wells in electric fields from the temperature dependence of the photocurrent. On heating from 10 K, we observed a decrease in the photocurrent up to ∼100 K, followed by a steady increase up to room temperature. The decrease is shown to be consistent with charged-impurity-assisted nonresonant tunneling which varies as T−1/2 in two dimensions, while the increase is consistent with thermal emission. The low field activation energy measured in a sample with x=0.33 is consistent with the thermal emission of heavy holes.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1418-1420 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of electrorefraction in quantum-well Fabry–Perot (FP) modulators are discussed theoretically and illustrated experimentally. The large electrorefraction at the zero-field heavy-hole exciton is shown to produce strong modulation in FP devices operated at that wavelength. At longer operating wavelengths, the weakening electrorefraction plays a diminishing role. By taking into account the field dependent absorption α(λ,E) and dispersion n(λ,E) of the quantum-well material, the measured reflectivity spectra are successfully modeled.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3569-3571 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detection of continuous-wave terahertz (THz) radiation has been demonstrated in GaAs/AlGaAs coupled quantum well p-i-n photodiodes by intrasubband absorption. The sharp interwell tunneling resonances observed in the photocurrent are highly sensitive to temperature, and the carrier temperature increase caused by the absorption of THz radiation is found to affect the photocurrent in a qualitatively similar manner. We find that the effect results in detectivities of THz radiation around 1 mA/W for a photocurrent signal of 100 nA. We discuss the functionality of our device in the context of an "optical/THz mixer,'' where the mixing occurs between the modulation frequencies of the applied THz and visible light fields. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of fish biology 51 (1997), S. 0 
    ISSN: 1095-8649
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Basking sharks Cetorhinus maximus 〉3 m total length arrived off Plymouth, U.K. directly after the increase in zooplankton density in May, while young-of-the-year basking sharks (〈3 m) occurred when zooplankton density was lower (0·8-1·1 g m−3). No basking sharks were seen after July when the zooplankton density was least.
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 30 (1994), S. 0 
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: : Diquat herbicide and rhodamine WT dye were applied in a lake to three 1.6 ha plots either with a polymer, which reportedly aids in sinking and confinement of aquatic herbicides, or without a polymer. Diquat and dye concentrations were measured at three different depths in the water column within the plots during the first three hours after application to determine vertical distribution of diquat and dye, and in composite samples at fixed distances from the plot up to 168 hours after application to determine movement out of the treated plots. Diquat and dye were homogeneous in the water column when no polymer was used, but were concentrated near the surface when polymer was used. This distribution may have resulted from temperature stratification. Polymer did not affect movement of diquat or dye out of the plots. The half-lives of diquat within the plots were 25 (SE=6.2) hr, 39 (SE=4.3) hr, and 25 (SE=2.0) hr. Forty-six percent of samples collected at the edges of the plots did not contain detectable diquat residues and only 66 percent of those samples with detectable diquat contained greater than the potable water tolerance (10 ppb). Diquat was not found in any samples 168 hours after application 61 m or farther from the edge of the plots. Dye and diquat concentrations were weakly correlated within and outside the plots. Dye half-lives were consistently higher than diquat, which suggests that the herbicide was removed from the water by plants and sediments more rapidly than dye.
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