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  • 1
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    Stratigraphy of the Sixteen Mile Creek lagoon, and its implications for Lake Ontario water levels (1988)
    Canadian Science Publishing
    Details
    Publication Date: 1988-08-01
    Print ISSN: 0008-4077
    Electronic ISSN: 1480-3313
    Topics: Geosciences
    Published by Canadian Science Publishing
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    PAPER CURRENT
  • 2
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    Stratigraphy of the Sixteen Mile Creek lagoon, and its implications for Lake Ontario water levels: Reply (1989)
    Canadian Science Publishing
    Details
    Publication Date: 1989-05-01
    Print ISSN: 0008-4077
    Electronic ISSN: 1480-3313
    Topics: Geosciences
    Published by Canadian Science Publishing
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  • 3
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    Description of manganese nodules collected by the U.S.S. NERO during survey for a trans-pacific cable (1905)
    PANGAEA
    In:  Supplement to: Flint, J M (1905): A contribution to the oceanography of the Pacific compiled from data collected by the United States Steamer NERO while engaged in the survey of a route for a trans-pacific cable (Uss NERO, 1899-1900). Bulletin of United States National Museum, 55, 130 pp, https://repository.si.edu/bitstream/handle/10088/10095/USNMB_551905uniteds.pdf
    Details
    Publication Date: 2023-08-28
    Description: In the early part of 1899 the U.S.S. Nero was dispatched from San Francisco to survey a route for a telegraph cable between the United States, the Philippines Islands and Japan. Concurent with meteorological and oceanographic observations, closely spaced samples of bottom material were systematically sampled. They have been carefully accounted and described by James M. Flint in this volume. On the way, numerous submarine peaks were discovered. During this voyage U.S.S. Nero also took a sounding in the area of the Challenger Deep, recording a depth of 5269 fathoms (9636 m), the greatest depth recorded at that time. Carefull study of the deep-sea deposits have also revealed a number of manganese nodules and encrustations as well as micronodules.
    Keywords: Date/Time of event; Description; Dredge; DRG; East Pacific Ocean; Elevation of event; Event label; Latitude of event; Longitude of event; NERO_1899-1900; NERO99-1004; NERO99-1009; NERO99-1041; NERO99-1055; NERO99-106; NERO99-1072; NERO99-1077; NERO99-1124; NERO99-1125; NERO99-1128; NERO99-1138; NERO99-1142; NERO99-1151; NERO99-1183; NERO99-1185; NERO99-1197; NERO99-1204; NERO99-1258; NERO99-1264; NERO99-1304; NERO99-1315; NERO99-1329; NERO99-1340; NERO99-1343; NERO99-1349; NERO99-1396; NERO99-1406; NERO99-1496; NERO99-152; NERO99-1522; NERO99-1538; NERO99-1572; NERO99-167; NERO99-1704; NERO99-1746; NERO99-175; NERO99-179; NERO99-1866; NERO99-1952; NERO99-2048; NERO99-2056; NERO99-2067; NERO99-257; NERO99-285; NERO99-295; NERO99-331; NERO99-335; NERO99-338; NERO99-350; NERO99-352; NERO99-356; NERO99-361; NERO99-373; NERO99-384; NERO99-390; NERO99-427; NERO99-430; NERO99-463; NERO99-498; NERO99-506; NERO99-512; NERO99-521; NERO99-530; NERO99-591; NERO99-600; NERO99-603; NERO99-615; NERO99-637; NERO99-688; NERO99-705; NERO99-715; NERO99-722; NERO99-740; NERO99-777; NERO99-93; NERO99-951; NERO99-953; NERO99-982; NERO99-990; NERO99-992; NOAA and MMS Marine Minerals Geochemical Database; NOAA-MMS; Page(s); Sample type; Substrate type; U.S.S. Nero (1898)
    Type: Dataset
    Format: text/tab-separated-values, 317 data points
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    DATA PANGAEA
  • 4
    Electronic Resource
    Electronic Resource
    The characteristics of optical waveguides fabricated in Y- and Z-cut LiNbO3 by He+ implantation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 464-465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the orientation of the LiNbO3 samples on the characteristics of planar waveguides fabricated by He+ implantation are presented. They show that the number of extraordinary modes is the same in Y- and Z-cut samples whereas the Z-cut samples support more ordinary modes than do Y-cut samples. Also the attenuation of each mode is lower in Z-cut material, showing that Z-cut material is more suitable for the fabrication of low loss waveguides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337624
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  • 5
    Electronic Resource
    Electronic Resource
    Spin-cluster effects in the spin glass Fe2−xTi1+xO5 as observed by transverse-field muon-spin relaxation (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5640-5640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse-field muon-spin-relaxation (μSR) experiments on the anisotropic spin glass Fe2−xTe1+xO5 were performed near and below the spin-glass temperature (x=0.25; Tg=43.5 K). Earlier1 single-crystal work has indicated that spin-cluster effects are present in zero field slightly above the glass temperature. The effect of a transverse-field (B⊥) upon the spin-glass transition and state has been studied by measuring the temperature dependencies of the muon hyperfine parameters at B⊥=5 kOe, and the field dependencies at 7, 17, and 49 K. The B⊥ direction has been chosen to be perpendicular to the c axis. Spin-cluster effects, as signaled by anomalous muon-spin relaxation, have been observed above 44 K in 5 kOe transverse field; further, exponential muon-spin relaxation above 60 K is observed as expected for a paramagnet. A substantial difference in the field dependence of the relaxation rate is seen between 49 K data and data taken at temperatures (7 and 17 K) well below Tg. A shift in Tg due to an applied magnetic field (⊥ c axis) has not been observed. These single-crystal μSR results will be compared with earlier μSR work on metallic spin glasses, where in polycrystalline samples no spin-cluster effects have been observed.2
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342282
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  • 6
    Electronic Resource
    Electronic Resource
    Muon-spin-relaxation study of magnetism in ErBa2Cu3O6.2 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5055-5057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The copper magnetism of ErBa2Cu3O6.2 is examined by transverse-field (TF) and zero-field (ZF) muon-spin relaxation (μSR). These data indicate two magnetic phases with TN1(approximately-equal-to)330 K and TN2∼65 K. The second phase is signaled by deviation of the ZF-μSR frequencies from a standard magnetization curve and an abrupt change in the TF-μSR relaxation rate. A relaxation feature indicates a muon depolarization mechanism with a T3/2 dependence in the low-temperature phase. Observed fields are compared to those calculated for proposed magnetic structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344668
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  • 7
    Electronic Resource
    Electronic Resource
    Laser-induced chemical vapor deposition of hydrogenated amorphous silicon. II. Film properties (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2822-2829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of hydrogenated amorphous silicon thin films prepared by the laser-induced chemical vapor deposition (LICVD) of silane gas are described. We report the results of measurements of hydrogen concentration, infrared absorption, unpaired-spin density, optical and mechanical properties, electrical conductivity, and photoconductivity experiments. We conclude that the film properties are controlled primarily by the substrate temperature Ts. LICVD films are superior to those produced by conventional CVD because of the permissibly low values of Ts. This results in an increased hydrogen content (up to 30 at. %) and a reduced defect density (∼1016 spins/cm3). The hydrogen concentration is determined by the surface chemistry for Ts〈300 °C ([H]〉20 at. %) and by H2 evolution for Ts〉300 °C([H]〈20 at. %). The hydrogen is incorporated primarily in the SiH2 configuration and for Ts〈300 °C, the films contain some polysilane (SiH2)n regions. All the physical properties of the films are discussed in conjunction with the LICVD process characteristics and are also compared with the properties of films prepared by the plasma-decomposition and homogeneous chemical vapor deposition (HOMOCVD) techniques. In all cases, the differences can be attributed to variations in the processing conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339413
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  • 8
    Electronic Resource
    Electronic Resource
    Laser-induced chemical vapor deposition of hydrogenated amorphous silicon. I. Gas-phase process model (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2812-2821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the laser-induced chemical vapor deposition (LICVD) process, a CO2 laser beam impinges on a gas mixture parallel to the substrate upon which the film is deposited. Since heating of the reactant gases is accomplished only via the absorption of infrared photons, the reaction zone can be controlled precisely. The LICVD technique is a cold-wall thermal process allowing independent control of both the gas and substrate temperatures. In this paper, we propose a model for LICVD of silane (SiH4) and growth of hydrogenated amorphous silicon (a-Si:H) thin films in which the film growth is controlled by gas-phase homogeneous thermal decomposition of the SiH4. The peak gas temperature Tg depends on many process parameters, namely, gas partial pressures, laser power, substrate temperature, and cell geometry. Due to the extreme sensitivity of the growth rate G to the values of the partial pressures and laser power, these parameters must be fixed to within ±1% variation in order to control G to ±50% and prevent powder formation. LICVD gas-phase chemistry involves the production of SiH2 for the thermal decomposition of SiH4 and higher polysilanes (Si2H6, Si3H8, etc.) resulting from reactions between SiH2 and SiH4. SiH2 and possibly higher diradicals produced in the laser beam then diffuse to the substrate and react with the surface layer, thus inducing growth of the a-Si:H film and the concomitant elimination of H2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339412
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  • 9
    Electronic Resource
    Electronic Resource
    Laser-induced chemical vapor deposition of silicon nitride films: Film and process characterizations (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4535-4539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have deposited hydrogenated amorphous silicon-nitride (a-SixN1−x@B:H) films from NH3-SiH4-Ar gas mixtures, heated by gas-phase absorption of CO2 laser radiation. For the first time, stoichiometric (Si/N=0.75) a-Si3N4@B:H films were obtained for NH3/SiH4 flow ratios of the order of 1000 and substrate temperatures Ts of about 500 °C. Growth rates as high as 13 A(ring)/min were observed, depending on the partial pressure of SiH4, P(SiH4), the gas temperature Tg and Ts. Tg was calculated from a derived energy-balance equation, which depends sensitively on process parameters. To model the deposition process, the experimental film growth rate is separated into the Si growth rate G(Si) and the N growth rate G(N). Film stoichiometry is interpreted as the ratio G(Si)/G(N). The rate-limiting steps for Si growth are the gas-phase decomposition of SiH4 for Tg below about 750 °C and the SiH4 flow rate at higher Tg. G(N) is affected by both Ts and Tg. The NH3/SiH4 flow ratio must be kept large to ensure a sufficient concentration of N to attain stoichiometry. The reactions are likely to occur both in the gas phase and on the film surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338414
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  • 10
    Electronic Resource
    Electronic Resource
    Raman spectroscopic investigation of alkali-metal hexachloro compounds of refractory metals (1985)
    s.l. : American Chemical Society
    Inorganic chemistry 24 (1985), S. 3881-3884 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00217a035
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