ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The photoionization cross section (the absorption coefficient) of holes which are localized on deep centers with a short-range potential and make transitions into the valence band of a uniaxially deformed Ge-type semiconductor is calculated. As a result of the fact that the acceptor level and the extremum of the hole subbands split the photoionization threshold also splits, and four types of transitions of this kind arise. The population of the split impurity states and the contributions of transitions of each type to the absorption coefficient change with increasing temperature. Since deformation destroys the spherical symmetry of the problem, an appreciable polarization dependence of the absorption coefficient appears. The calculation is based on a general quantum-mechanical formula with a transition matrix element employing the wave function of an impurity center accompanying deformation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187746
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