Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 1655-1657
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Profiled buffer layers at the interfaces of amorphous silicon–germanium (a-SiGe:H) solar cells are routinely used to avoid band-gap discontinuities and high-defect densities at the p/i and i/n interfaces. It is shown that such profiled a-SiGe:H buffer layers can be replaced by a constant band-gap a-Si:H buffer, an inverse profiled a-SiGe:H buffer, or even a 3-nm-thin (δ) buffer at some distance away from the interface without losses in the open-circuit voltage VOC and fill factor while maintaining the same short current density jSC. In view of these results, common model assumptions for a-SiGe:H solar cells have to be revised. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1456548
Permalink
|
Location |
Call Number |
Expected |
Availability |