ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
To explore the ultimate threshold current limit in long-wavelength semiconductor lasers, InxGa1−xAs/InP strained-layer single quantum well laser diodes were studied for the first time by optically pumping with a 0.8 μm laser diode. Low-threshold (≤92 A/cm2) cw operation was obtained and the lasing wavelength (1.62 μm) corresponding to the transition from the first quantization state of a 25 A(ring) In0.8Ga0.2As well was observed. By taking the carrier collection efficiency (≤77%) into account, the actual threshold current density could be as low as 70 A/cm2.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103362
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