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  • 1
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    A synoptical classification of the Bivalvia (Mollusca) (2011)
    In:  Paleontological Contributions vol. 4, pp. ii-47
    Details
    Publication Date: 2024-01-12
    Description: Preface \nThis classification summarizes the suprageneric taxonomy of the Bivalvia for the upcoming revision of the Bivalvia volumes of the Treatise on Invertebrate Paleontology, Part N.
    Keywords: synoptical classification ; Bivalvia ; Mollusca
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Photoquenching and thermal recovery of a thermally stimulated current peak in semi-insulating GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4971-4974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A prominent thermally stimulated current peak T5 appearing in semi-insulating GaAs is shown to photoquench under infrared illumination, and then thermally recover at a rate r=2.0×108 exp(−0.26 eV/kT) s−1, exactly the same as that observed for EL2, within experimental error. Two possible explanations exist: (1) T5 and EL2 are microscopically very similar, probably each with an AsGa core; or (2) T5 is an electron trap that only appears to quench and recover with EL2 because EL2 controls the electron lifetime. Several other traps show similar quenching and recovery behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353816
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  • 3
    Electronic Resource
    Electronic Resource
    Optical absorption and emission of InP1−xSbx alloys (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4604-4609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed optical study of the metastable III/V semiconductor alloy InP1−xSbx is presented. InP1−xSbx layers are grown throughout the entire compositional range by atmospheric pressure organometallic vapor phase epitaxy on InP, InAs, and InSb substrates. Composition and strain are measured by combined electron microprobe analysis and x-ray diffractometry. The dependence of band gap on composition is experimentally established for the first time from absorption spectra measured at 10 and 300 K. The resultant value of the band-gap bowing parameter is 1.52±0.08 eV, independent of temperature. The absorption spectra show the InP1−xSbx layers to have long band tails, which extend further into the gap as the Sb concentration is increased. The band tails are induced by compositional clustering. Photoluminescence (PL) spectra are measured between 10 and 300 K. The PL peaks are assigned to recombination between carriers occupying band-tail states or to recombination via deep centers in the gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346169
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  • 4
    Electronic Resource
    Electronic Resource
    High-resistivity GaSb grown by molecular-beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1316-1319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaSb undoped layers grown by molecular-beam epitaxy on GaSb or on semi-insulating GaAs substrates at temperatures between 600 and 630 °C are shown to have carrier concentrations in the low 1013 cm−3 range, corresponding to almost intrinsic conditions. The materials have been characterized using current-voltage, capacitance-voltage, Hall effect, photoluminescence, thermally stimulated current, and secondary-ion mass spectrometry. Bulk GaSb (n type) is also found to have converted to high-resistance p type after a heat treatment at 630 °C. Speculations are offered for the responsible mechanism, but a definitive explanation does not exist at this time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351739
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  • 5
    Electronic Resource
    Electronic Resource
    High-resistivity GaAs grown by high-temperature molecular-beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1320-1322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that when grown by molecular-beam epitaxy at high temperatures around 700 °C, undoped GaAs layers display high resistivity. Preliminary results seem to imply that Ga-related inclusions that produce internal Schottky diodes might be responsible for this effect rather than the presence of deep centers. It is proposed that Ga-related inclusions that produce internal Schottky diodes might possibly be responsible for this effect rather than the presence of deep centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351740
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  • 6
    Electronic Resource
    Electronic Resource
    Investigation of organometallic vapor phase epitaxy of InAs and InAsBi at temperatures as low as 275 °C (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3940-3942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs and InAsBi have been grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) over a broad temperature range from 600 to as low as 275 °C. This is the lowest growth temperature ever reported for standard OMVPE. It is demonstrated that lowering the growth temperature is the most effective approach for increasing the Bi content in InAsBi alloys. For example, InAsBi samples with Bi concentrations as high as 6.1 at.% have been successfully grown at a temperature of 275 °C. Trimethylindium, arsine, and trimethylbismuth were used as precursors for most experiments. The growth efficiency is a constant for temperatures above 400 °C, indicating the growth rate is diffusion limited in this temperature regime. For lower temperatures, it decreases exponentially with decreasing temperature with an activation energy of 24 kcal/mol. Incomplete pyrolysis of TMIn limits the growth rate in this temperature regime. However, by substituting ethyldimethylindium for TMIn the diffusion controlled regime can be extended to lower temperatures. Hall effect measurements show that the n-type background concentration increases from approximately 2.3×1016 to 1019 cm−3 as the growth temperature decreases from 600 to 325 °C. Secondary-ion mass spectroscopy results show that the dominant impurity is carbon. Thus, carbon is mainly a donor in these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349204
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  • 7
    Electronic Resource
    Electronic Resource
    Comparison of deep centers in semi-insulating liquid-encapsulated Czochralski and vertical-gradient freeze GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8177-8182 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-inch, semi-insulating (SI) GaAs, grown by the vertical gradient freeze (VGF) technique, has been studied by IR absorption, temperature-dependent dark current and Hall-effect, thermally stimulated current (TSC), and photoinduced current transient spectroscopy and has been compared with undoped, SI GaAs, both As-rich and Ga-rich, grown by the high-pressure liquid-encapsulated Czochralski method. The results clearly indicate that (1) the VGF GaAs contains less EL2, which suggests a less As-rich crystal stoichiometry; (2) in some VGF samples activation energies of 0.43 or 0.46 eV are deduced from temperature-dependent carrier concentration or resistivity measurements, respectively, and (3) VGF samples often show a thermal quenching behavior in the TSC peak T5. There is evidence to suggest that the 0.43 eV center is related to VAs, and T5 to VGa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347421
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  • 8
    Electronic Resource
    Electronic Resource
    Organometallic vapor-phase epitaxy growth and characterization of Bi-containing III/V alloys (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4586-4591 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For potential infrared detector applications, single-crystalline InAsBi and InAsSbBi have been grown by atmospheric pressure organometallic vapor-phase epitaxy. The precursors used were trimethylindium, trimethylantimony, trimethylbismuth, and arsine at growth temperatures of 375 and 400 °C. Good quality epilayers with smooth surface morphologies were obtained by properly controlling the key growth parameter, the V/III ratio. The variation of lattice constant with solid composition for the InAs1−xBix system, a=6.058+0.966x, provides evidence that Bi atoms indeed incorporate substitutionally into the As sites of the sublattice in the InAs zinc-blende structure. An extrapolated lattice parameter for the hypothetical zinc-blende InBi is 7.024 A(ring). Thermodynamic calculations of the InAs-InBi and InSb-InBi pseudobinary phase diagrams were carried out using the delta-lattice-parameter model using the lattice constant for zinc-blende InBi of 7.024 A(ring). The results agree well with experimental data. The calculations predict that the solid solubility limit of Bi in InAs is less than 0.025 at. %. The calculated maximum solubility limit is 2.1 at. % for Bi in InSb at the eutectic temperature of 132 °C. Thus, tremendously large miscibility gaps exist in both alloy systems. The critical temperature was predicted to be 2569 °C for the InAs-InBi system and 496 °C for the InSb-InBi system. The miscibility gap is the major factor limiting Bi incorporation into the InAsSb alloys. Nevertheless, metastable InAsBi and InAsSbBi alloys were grown with concentrations far exceeding the solubility limit. For example 3.1 at. % Bi was incorporated into InAs. Infrared photoluminescence measurements show a decrease of peak energy with increasing Bi concentration in the alloys, with dEg/dx=−55 meV/at. %Bi.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346166
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1187-1191 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photoluminescence (PL) from InAsBi and InAsSbBi epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been studied. The PL from ternary InAsBi was investigated for Bi concentrations of ≤2.3 at. %. The peak energy decreases at a rate of 55 meV/at. % Bi with increasing Bi concentration. A study of the transmission spectra of these Bi-containing alloys confirms the above result. The PL peak is assigned to near band edge emission for InAsBi. The value of dEg/dx=−55-meV/at. % Bi is more than double the previously reported theoretical prediction for the band gap of InAsBi. The PL for the quaternary layer of InAsSbBi is also studied for Sb concentrations of 〈10 at. % and Bi concentrations of ≤1.5 at. %. Bi incorporation in InAs1−xSbx(0.07〈x〈0.10) reduces the PL peak energy at a rate of 46-meV/at. % Bi. These results imply that incorporation of only a few percent of Bi is required in InAs0.35Sb0.65 to achieve a band gap of 0.1 eV, equivalent to a wavelength of 12 μm, desired for infrared detector applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346715
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  • 10
    Electronic Resource
    Electronic Resource
    The effect of temperature and doping on the segregation of In during solid-phase-epitaxial crystallization of Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3313-3318 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The segregation of In during solid-phase-epitaxial crystallization of amorphous Si layers is examined as a function of annealing temperature and the presence of p- and n-type dopants. The fraction of In segregated to the sample surface decreases with increasing temperature from 38% at 450 °C to 18% at 600 °C. This is shown to be consistent with changes in the crystallization velocity and In diffusivity in amorphous Si. The addition of p- and n-type dopants is shown to increase the crystallization velocity and further decrease the segregation of In. The reduced segregation is shown to be inconsistent with the dopant-induced velocity changes alone, and it is speculated that dopant-induced solubility changes are responsible for this effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352980
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