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  • 1
    Electronic Resource
    Electronic Resource
    Surface segregation effects of In in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2481-2485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL), secondary-ion mass spectroscopy (SIMS), and cross-sectional transmission electron microscopy (TEM) measurements have been performed to assess surface segregation of In in GaAs during molecular-beam epitaxial growth of InAs monolayers between GaAs layers. The InAs growth temperature at which In segregation is detectable depends on the characterization technique used; using PL it is above 420 °C, but from TEM and SIMS it is 420 and 340 °C, respectively. These results highlight the need for complementary information to provide a better understanding of the segregation phenomenon. SIMS data show that the total amount of In segregating and the extent of its distribution both increase with InAs deposition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354686
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  • 2
    Electronic Resource
    Electronic Resource
    The lattice locations of silicon atoms in delta-doped layers in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 633-639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used secondary ion mass spectrometry, local vibrational mode infrared absorption, and electrical characterization to study the incorporation of Si delta-doped planes in GaAs grown by molecular beam epitaxy at 400 °C, in the concentration range 0.01–0.5 monolayers. A correspondence is observed between the density of SiGa donors, the free electron concentration and the total Si coverage, up to a coverage of ∼1013 cm−2; however, above this value, the electron density falls, while [SiGa] remains constant up to a coverage of ∼1014 cm−2, and then falls below the detection limit at 0.5 monolayer coverage. These effects have been interpreted in terms of a model which takes account of Si migration and aggregation on the delta-doped plane during deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353374
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  • 3
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction and optical measurements on the molecular-beam epitaxial growth of one and two monolayers of InAs on GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1242-1247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here on the reflection high-energy electron diffraction, photoluminescence (PL), and photoluminescence excitation study of the direct growth by molecular-beam epitaxy of one and two monolayers (MLs) of InAs on GaAs. InAs can be grown pseudomorphically up to a thickness of 1 ML, deposition of 2 MLs results in three-dimensional nucleation. In the latter case our results suggest that the first ML is disrupted by the growth of the second. This finding is in contradiction of the Stranski–Krastanov growth mode. A 1-ML InAs quantum well (QW) with GaAs barriers produces intense luminescence at 1.465 eV, whereas for the intended 2-ML InAs QW sample, PL characteristic of InAs clusters with a most probable thickness of 3 MLs is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351296
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  • 4
    Electronic Resource
    Electronic Resource
    The vibrational modes of silicon acceptors in p-type GaAs grown by molecular beam epitaxy on a (111)A plane (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3574-3576 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon impurities in p-type GaAs grown by molecular beam epitaxy occupy As lattice sites and give rise to an infrared active localized vibrational mode (LVM) which appears as a Fano profile near 395 cm−1 in samples with p=1019 cm−3 or 1020 cm−3. 2 MeV electron irradiation reduces p, leading to the emergence of the usual LVM absorption line of SiAs at 399 cm−1. The treatment also leads to site switching to produce SiGa donors giving an LVM at 384 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352913
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  • 5
    Electronic Resource
    Electronic Resource
    The transition from dilute aluminum δ structures to an AlAs monolayer in GaAs and a comparison with Si δ doping (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7627-7629 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superlattices of Al δ layers embedded in GaAs have been grown by molecular beam epitaxy at 400 °C on (001) GaAs. Infrared absorption measurements revealed a shift of the Al localized vibrational mode (LVM) from 361.4 to 358.3 cm−1 as the doping was increased from 0.25 monolayers (ML) to 1.4 ML per δ plane, while Raman scattering demonstrated a clear transition from the TO-like LVM to a longitudinal LO-like mode. X-ray measurements showed that the Al atoms were confined to a thickness of 6 A(ring) for the highest areal concentrations. The LVM behavior is compared with that of Si δ layers where the absorption tends to zero as the areal concentration increases up to 0.5 ML. It is concluded that SiGa atoms move off their lattice sites and/or change their charge states as the coverage approaches 0.5 ML. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357931
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  • 6
    Electronic Resource
    Electronic Resource
    A local vibrational mode investigation of p-type Si-doped GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7839-7849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption (IR) and Raman scattering measurements have been made of the localized vibration modes (LVM) due to defects incorporating silicon impurities in p-type Si-doped GaAs grown by liquid phase epitaxy (LPE) on (001) planes and by molecular beam epitaxy (MBE) on (111)A and (311)A planes. Analysis of a closely compensated LPE sample indicated that an existing calibration factor for the SiAs LVM (399 cm−1) relating the integrated absorption coefficient (IA) to the concentration [SiAs] should be increased by 40%, so that IA=1 cm−2 corresponds to [SiAs]=7×1016 cm−3. The SiAs LVM appeared as a Fano dip in the hole absorption continuum at ∼395 cm−1 in the highly doped p-type material, some 4 cm−1 lower in frequency than its normal position in compensated GaAs. Electron irradiation of samples led to the progressive removal of the Fano dip and a shift with the emergence of the expected SiAs LVM absorption line at 399 cm−1. In MBE samples the irradiation also generated SiGa donors, but the site switching was not detected in LPE material. By contrast, Raman spectra of as-grown p-type samples exhibited a symmetrical peak at 395 cm−1, which also shifted towards 399 cm−1 as the free carriers were removed. MBE (111)A GaAs:Si compensated by SnGa donors revealed the SiAs LVM at its normal position. After hydrogenation of MBE and LPE samples, only stretch modes due to H-SiAs were observed. Passivated MBE GaAs (111)A codoped with Si and Be showed stretch modes due to both shallow acceptors. It was thereby concluded that only one type of acceptor (SiAs) was present in p-type Si-doped GaAs, contrary to previous proposals. There was no evidence for the presence of SiAs pairs or larger clusters. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357892
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  • 7
    Electronic Resource
    Electronic Resource
    Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 776-778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison has been made of the surface morphology of thin InAs films grown on GaAs (001) and (111)A substrates by molecular beam epitaxy using in situ reflection high energy electron diffraction and ex situ atomic force microscopy. InAs growth on (001) surface proceeds via the Stranski-Krastanov mechanism, with three-dimensional island formation beginning between one and two monolayers, but on the (111)A surface there is a two-dimensional mode, independent of detailed growth conditions. This advantage accruing from the use of a novel index substrate provides the opportunity of fabricating a wide range of high quality heterostructures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117888
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  • 8
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs (111)A (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 190-192 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have made a study of reflection high-energy electron diffraction intensity oscillations during the growth of GaAs on singular GaAs (111)A substrates by molecular beam epitaxy. The behavior is quite different from growth of GaAs on (001) orientated substrates in that the oscillation period is growth temperature and As4:Ga flux ratio dependent. We speculate that this is due to the (110)-like configuration of the (111)A 2×2 reconstructed surface, which requires direct interaction of a Ga and an As atom for growth to occur.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111528
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  • 9
    Electronic Resource
    Electronic Resource
    Indium migration control on patterned substrates for optoelectronic device applications (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1009-1011 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained layer InGaAs/GaAs quantum wells have been grown by molecular-beam epitaxy on patterned (100) GaAs substrates. Indium migration away from the facets of patterned mesas is shown to be strongly dependent upon the arsenic flux during growth. Based upon this effect we have grown structures in which the number of active quantum wells in adjacent areas of a segmented contact device can be varied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112208
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  • 10
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction study of the GaAs:Si:GaAs system (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1805-1807 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface structures occurring as a function of coverage during the deposition of Si on GaAs (001) and the further changes brought about by subsequent GaAs overgrowth using molecular beam epitaxy (MBE) have been studied with reflection high-energy electron diffraction (RHEED). Deposition of Si in the presence of an As4 flux causes the surface reconstruction to change systematically from 2×4 to symmetric 3×1 via an asymmetric 3×1 stage. The process is reversed during the overgrowth of GaAs. The change in surface periodicity in the [110] direction from two-fold to three-fold is explained by a superpositioning model. The implications of this for the growth and incorporation mechanisms of Si on GaAs are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108406
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