Publication Date:
2014-06-04
Description:
Article Understanding the resistive switching mechanism in oxide-based memories is an ongoing challenge. Here, the authors isolate an unintentional interfacial layer as the origin of resistive switching in Pt/Nb:SrTiO 3 junctions, and show that suitable processing can remove this unwanted contribution. Nature Communications doi: 10.1038/ncomms4990 Authors: Evgeny Mikheev, Brian D. Hoskins, Dmitri B. Strukov, Susanne Stemmer
Electronic ISSN:
2041-1723
Topics:
Biology
,
Chemistry and Pharmacology
,
Natural Sciences in General
,
Physics
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